| Citation: |
Dong Xin, Zhao Wang, Zhang Yuantao, Zhang Baolin, Li Xiangping, Du Guotong. MgZnO/ZnO p-n Heterojunctions Fabricated by MOCVD[J]. Journal of Semiconductors, 2008, 29(7): 1338-1341.
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Dong X, Zhao W, Zhang Y T, Zhang B L, Li X P, Du G T. MgZnO/ZnO p-n Heterojunctions Fabricated by MOCVD[J]. J. Semicond., 2008, 29(7): 1338.
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MgZnO/ZnO p-n Heterojunctions Fabricated by MOCVD
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Abstract
A MgZnO/ZnO p-n heterojunction was grown on GaAs substrate by metal-organic chemical vapor deposition.The I-Vcharacteristics showed a diode characteristic between the n-ZnO and p-MgZnO layers with a threshold voltage of 3.6V.When the injection current attained 50 mA,the emission was visible to the naked eye in the dark.Room temperature measurements,such as the HALL,XRD,PL,and EL spectra were carried out.The PL spectra of the n-ZnO and p-MgZnO layers both showed strong NBE peaks and weak broad DLE peaks.The EL spectra of the junction under different injection current all showed strong broad DLE peaks from 450 to 550nm,attributed to the deep-level transition.-
Keywords:
- MOCVD,
- ZnO,
- MgZnO,
- heterojunction,
- EL
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References
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Proportional views
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