One Method for Fast Gate Oxide TDDB Lifetime Prediction

Zhao Yi; Wan Xinggong; Xu Xiangming

Chin. J. Semicond. > 2005, Volume 26 > Issue 12 > 2271-2274

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One Method for Fast Gate Oxide TDDB Lifetime Prediction

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Abstract: A method for fast gate oxide TDDB lifetime prediction for process control monitors (PCM) is proposed.For normal TDDB lifetime prediction at operation voltage and temperature,we must get three lifetimes at relative low stress voltages and operation temperature.Then we use these three lifetimes to project the TDDB lifetime at operation voltage and temperature via the E-model.This requires a very long time for measurement.With our new method,it can be calculated quickly by projecting the TDDB lifetime at operation voltage and temperature with measurement data at relatively high stress voltages.Our test case indicates that this method is very effective.And the result with our new method is very close to that with the normal TDDB lifetime prediction method.But the measurement time is less than 50s for one sample,less than 1/100000 of that with the normal prediction method.With this new method, we can monitor gate oxide TDDB lifetime on-line.

Key words: TDDB, lifetime, prediction

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Zhao Yi, Wan Xinggong, Xu Xiangming. One Method for Fast Gate Oxide TDDB Lifetime Prediction[J]. Journal of Semiconductors, 2005, 26(12): 2271-2274.

Zhao Y, Wan X G, Xu X M. One Method for Fast Gate Oxide TDDB Lifetime Prediction[J]. Chin. J. Semicond., 2005, 26(12): 2271.

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Received: 19 August 2015 Revised: Online: Published: 01 December 2005

A method for fast gate oxide TDDB lifetime prediction for process control monitors (PCM) is proposed.For normal TDDB lifetime prediction at operation voltage and temperature,we must get three lifetimes at relative low stress voltages and operation temperature.Then we use these three lifetimes to project the TDDB lifetime at operation voltage and temperature via the E-model.This requires a very long time for measurement.With our new method,it can be calculated quickly by projecting the TDDB lifetime at operation voltage and temperature with measurement data at relatively high stress voltages.Our test case indicates that this method is very effective.And the result with our new method is very close to that with the normal TDDB lifetime prediction method.But the measurement time is less than 50s for one sample,less than 1/100000 of that with the normal prediction method.With this new method, we can monitor gate oxide TDDB lifetime on-line.

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