Abstract: A method for fast gate oxide TDDB lifetime prediction for process control monitors (PCM) is proposed.For normal TDDB lifetime prediction at operation voltage and temperature,we must get three lifetimes at relative low stress voltages and operation temperature.Then we use these three lifetimes to project the TDDB lifetime at operation voltage and temperature via the E-model.This requires a very long time for measurement.With our new method,it can be calculated quickly by projecting the TDDB lifetime at operation voltage and temperature with measurement data at relatively high stress voltages.Our test case indicates that this method is very effective.And the result with our new method is very close to that with the normal TDDB lifetime prediction method.But the measurement time is less than 50s for one sample,less than 1/100000 of that with the normal prediction method.With this new method, we can monitor gate oxide TDDB lifetime on-line.

Key words: TDDB, lifetime, prediction