Chin. J. Semicond. > 2004, Volume 25 > Issue 10 > 1238-1242
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BV_(CBO)为23V且f_T为7GHz30叉指微波功率SiGe HBT(英文)

熊小义 , 张伟 , 许军 , 刘志宏 , 陈长春 , 黄文韬 , 李希有 , 钟涛 and 钱佩信

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Key words: SiGeHBT, fT, 功率管

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    Received: 19 August 2015 Revised: Online: Published: 01 October 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(10): 1238-1242
      熊小义, 张伟, 许军, 刘志宏, 陈长春, 黄文韬, 李希有, 钟涛, 钱佩信. BV_(CBO)为23V且f_T为7GHz30叉指微波功率SiGe HBT(英文)[J]. 半导体学报(英文版), 2004, 25(10): 1238-1242.
      Citation:
      熊小义, 张伟, 许军, 刘志宏, 陈长春, 黄文韬, 李希有, 钟涛, 钱佩信. BV_(CBO)为23V且f_T为7GHz30叉指微波功率SiGe HBT(英文)[J]. 半导体学报(英文版), 2004, 25(10): 1238-1242.
      shu

      • Received Date: 2015-08-19

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