| Citation: |
Tang Ying, Liu Su, Li Siyuan, Wu Rong, Chang Peng. A Novel Structure for a Static Induction Transistor[J]. Journal of Semiconductors, 2007, 28(6): 918-922.
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Tang Y, Liu S, Li S Y, Wu R, Chang P. A Novel Structure for a Static Induction Transistor[J]. Chin. J. Semicond., 2007, 28(6): 918.
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A Novel Structure for a Static Induction Transistor
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Abstract
A new structure is presented for designing and fabricating a static induction transistor (SIT).The transistor is designed to be surrounded by a deep groove to cut off the various probable parasitic effects that may degrade the device performance,especially the parallel-current effect.A mathematical model for the parasitic effect of SIT is proposed and simulated with PSPICE.The simulation results agree with the experiments.The novel structure is effective for avoiding the parallel-current effect.The etching technique of the groove is also investigated in depth in this paper.-
Keywords:
- SIT,
- deep groove structure,
- parasitic effect,
- deep groove etching
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References
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Proportional views
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