Chin. J. Semicond. > 1984, Volume 5 > Issue 3 > 307-310
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由电容温度关系分析HgCdTe深能级特性

童斐明 , 杨秀珍 and 王戎兴

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1984

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      Article Navigation >  Journal of Semiconductors  > 1984  >  5(3): 307-310
      童斐明, 杨秀珍, 王戎兴. 由电容温度关系分析HgCdTe深能级特性[J]. 半导体学报(英文版), 1984, 5(3): 307-310.
      Citation:
      童斐明, 杨秀珍, 王戎兴. 由电容温度关系分析HgCdTe深能级特性[J]. 半导体学报(英文版), 1984, 5(3): 307-310.
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      • Received Date: 2015-08-20

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