Chin. J. Semicond. > 1985, Volume 6 > Issue 3 > 329-332
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硅片表面热诱导微缺陷的行为及其主要来源

张一心 and 程美乔

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1985

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      Article Navigation >  Journal of Semiconductors  > 1985  >  6(3): 329-332
      张一心, 程美乔. 硅片表面热诱导微缺陷的行为及其主要来源[J]. 半导体学报(英文版), 1985, 6(3): 329-332.
      Citation:
      张一心, 程美乔. 硅片表面热诱导微缺陷的行为及其主要来源[J]. 半导体学报(英文版), 1985, 6(3): 329-332.
      shu

      • Received Date: 2015-08-20

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