Chin. J. Semicond. > 1985, Volume 6 > Issue 2 > 199-202
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微波凹槽栅结构GaAs FET’s的最佳凹槽深度的选择的讨论

汪正孝

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    Received: 20 August 2015 Revised: Online: Published: 01 February 1985

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      Article Navigation >  Journal of Semiconductors  > 1985  >  6(2): 199-202
      汪正孝. 微波凹槽栅结构GaAs FET’s的最佳凹槽深度的选择的讨论[J]. 半导体学报(英文版), 1985, 6(2): 199-202.
      Citation:
      汪正孝. 微波凹槽栅结构GaAs FET’s的最佳凹槽深度的选择的讨论[J]. 半导体学报(英文版), 1985, 6(2): 199-202.
      shu

      • Received Date: 2015-08-20

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