Chin. J. Semicond. > 2004, Volume 25 > Issue 6 > 741-744

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磁控溅射金属预置层后硒化法制备CuInSe_2薄膜工艺条件的优化

汤会香 , 严密 , 张辉 , 张加友 , 孙云 , 薛玉明 and 杨德仁

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Key words: 正交实验, CuInSe2薄膜, 优化制备

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    Received: 19 August 2015 Revised: Online: Published: 01 June 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(6): 741-744
      汤会香, 严密, 张辉, 张加友, 孙云, 薛玉明, 杨德仁. 磁控溅射金属预置层后硒化法制备CuInSe_2薄膜工艺条件的优化[J]. 半导体学报(英文版), 2004, 25(6): 741-744.
      Citation:
      汤会香, 严密, 张辉, 张加友, 孙云, 薛玉明, 杨德仁. 磁控溅射金属预置层后硒化法制备CuInSe_2薄膜工艺条件的优化[J]. 半导体学报(英文版), 2004, 25(6): 741-744.
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      • Received Date: 2015-08-19

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