Citation: |
Li Zhixin, Xiao Jinglin. Properties of Strong-Coupling Excitons in Semiconductor Quantum Dots[J]. Journal of Semiconductors, 2006, 27(10): 1755-1758.
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Li Z X, Xiao J L. Properties of Strong-Coupling Excitons in Semiconductor Quantum Dots[J]. Chin. J. Semicond., 2006, 27(10): 1755.
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Properties of Strong-Coupling Excitons in Semiconductor Quantum Dots
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Abstract
The properties of strong-coupling excitons in semiconductor quantum dots are investigated using the linear combination operator and unitary transformation methods.The ground state energy of the heavy-hole exciton is obtained under the effective-mass approximation.The influences of the radius of the quantum dots and the confinement strength on the ground state energy of the strong-coupling exciton in the semiconductor quantum dots are discussed in the case of strong-coupling.Numerical calculations are performed for a TlCl semiconductor.Our results illustrate that the energy of the ground state heavy-hole exciton decreases with the increase of the radius of the quantum dots and increases with the increase of the confinement strength ω0 of quantum dots. -
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