Chin. J. Semicond. > 2002, Volume 23 > Issue 4 > 388-393
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富氧氮氧化硅薄膜退火的研究

但亚平 , 岳瑞峰 , 王燕 , 姚永昭 , 徐杨 and 刘理天

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Key words: 氮氧化硅薄膜, 红外吸收谱, XPS, PECVD

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    Received: 19 August 2015 Revised: Online: Published: 01 April 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(4): 388-393
      但亚平, 岳瑞峰, 王燕, 姚永昭, 徐杨, 刘理天. 富氧氮氧化硅薄膜退火的研究[J]. 半导体学报(英文版), 2002, 23(4): 388-393.
      Citation:
      但亚平, 岳瑞峰, 王燕, 姚永昭, 徐杨, 刘理天. 富氧氮氧化硅薄膜退火的研究[J]. 半导体学报(英文版), 2002, 23(4): 388-393.
      shu

      • Received Date: 2015-08-19

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