Chin. J. Semicond. > 1986, Volume 7 > Issue 5 > 551-554
|

CONTENTS

Pb_(0.88)Sn_(0.12)Te晶体退火引起的转型层特性及其在激光器制做上的应用

陈鹤明 , 曹根娣 , 朱筱春 , 张位在 and 王海龙

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2496 Times PDF downloads: 949 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 May 1986

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1986  >  7(5): 551-554
      陈鹤明, 曹根娣, 朱筱春, 张位在, 王海龙. Pb_(0.88)Sn_(0.12)Te晶体退火引起的转型层特性及其在激光器制做上的应用[J]. 半导体学报(英文版), 1986, 7(5): 551-554.
      Citation:
      陈鹤明, 曹根娣, 朱筱春, 张位在, 王海龙. Pb_(0.88)Sn_(0.12)Te晶体退火引起的转型层特性及其在激光器制做上的应用[J]. 半导体学报(英文版), 1986, 7(5): 551-554.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return