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Horizontal Growth and Ultraviolet Sensitivity Characteristics of ZnO Nanowires on Sapphire Substrates

Deng Hong, Tang Bin, Cheng He, Wei Min and Chen Jinju

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Abstract: ZnO nanowires were synthesized without any kind of catalyst on a-plane sapphire substrate by chemical vapor deposition (CVD).Only the (100) and (101) diffraction peaks of ZnO were found on the XRD patterns of the samples.SEM images show that the ZnO nanowires are parallel to the sapphire substrate.Following the deposition of Au finger electrodes on the samples, the samples’ UV-sensitive performance was detected with a wavelength of illumination of 256nm. The results show that the ZnO nanowires respond very fast to UV-light, the ratio of photo current to dark current is about 30 at 5V, and the maximum photo-responsibility is of 0.56 A/W at 354nm.

Key words: ZnO nanowires, ultraviolet, I-V characteristic, photo-responsibility

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    Received: 18 August 2015 Revised: 04 September 2006 Online: Published: 01 January 2007

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      Article Navigation >  Journal of Semiconductors  > 2007  >  28(1): 56-59
      Deng Hong, Tang Bin, Cheng He, Wei Min, Chen Jinju. Horizontal Growth and Ultraviolet Sensitivity Characteristics of ZnO Nanowires on Sapphire Substrates[J]. Journal of Semiconductors, 2007, 28(1): 56-59. ****Deng H, Tang B, Cheng H, Wei M, Chen J J. Horizontal Growth and Ultraviolet Sensitivity Characteristics of ZnO Nanowires on Sapphire Substrates[J]. Chin. J. Semicond., 2007, 28(1): 56.
      Citation:
      Deng Hong, Tang Bin, Cheng He, Wei Min, Chen Jinju. Horizontal Growth and Ultraviolet Sensitivity Characteristics of ZnO Nanowires on Sapphire Substrates[J]. Journal of Semiconductors, 2007, 28(1): 56-59. ****
      Deng H, Tang B, Cheng H, Wei M, Chen J J. Horizontal Growth and Ultraviolet Sensitivity Characteristics of ZnO Nanowires on Sapphire Substrates[J]. Chin. J. Semicond., 2007, 28(1): 56.
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      Horizontal Growth and Ultraviolet Sensitivity Characteristics of ZnO Nanowires on Sapphire Substrates

      • National Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Scienceand Technology of China,Chengdu 610054,China

      • National Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Scienceand Technology of China,Chengdu 610054,China

      • School of Science,Southwest Petroleum University,Chengdu 610500,China

      • National Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Scienceand Technology of China,Chengdu 610054,China

      • National Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Scienceand Technology of China,Chengdu 610054,China

      • National Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Scienceand Technology of China,Chengdu 610054,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-07-28
      • Revised Date: 2006-09-04
      • Published Date: 2006-12-26

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