Citation: |
Jin Boshi, Wu Qun, Yang Guohui, Meng Fanyi, Fu Jiahui. A Fully-Integrated Dual Band CMOS Power Amplifier Based on an Active Matching Transformer[J]. Journal of Semiconductors, 2008, 29(11): 2204-2208.
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Jin B S, Wu Q, Yang G H, Meng F Y, Fu J H. A Fully-Integrated Dual Band CMOS Power Amplifier Based on an Active Matching Transformer[J]. J. Semicond., 2008, 29(11): 2204.
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A Fully-Integrated Dual Band CMOS Power Amplifier Based on an Active Matching Transformer
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Abstract
We propose a dual band CMOS power amplifier for mobile WiMAX systems.The power amplifier,combined with an active matching transformer,is fully integrated and fabricated in a 0.13μm CMOS process.The transformer operates at dual bands with active matching circuit.The measured result shows that the transformer efficiency of 78.2% and 70.4% at 2.5 and 3.5GHz are realized,respectively,and 26.5 and 24.8dB gain are achieved.The PAE reaches 20% and 28% at 2.5 and 3.5GHz,respectively.The third inter-modulation (IM3) is lower than -30dBc at the 25dBm average power.-
Keywords:
- RF CMOS,
- power amplifier,
- transformer,
- WiMAX
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References
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Proportional views