Chin. J. Semicond. > 2004, Volume 25 > Issue 7 > 778-783
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包含衬底电流的LDD MOSFET输出I-V特性的经验模型分析(英文)

于春利 , 郝跃 and 杨林安

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Key words: 轻掺杂漏MOS场效应管, 衬底电流, 热载流子效应, 深亚微米

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    Received: 19 August 2015 Revised: Online: Published: 01 July 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(7): 778-783
      于春利, 郝跃, 杨林安. 包含衬底电流的LDD MOSFET输出I-V特性的经验模型分析(英文)[J]. 半导体学报(英文版), 2004, 25(7): 778-783.
      Citation:
      于春利, 郝跃, 杨林安. 包含衬底电流的LDD MOSFET输出I-V特性的经验模型分析(英文)[J]. 半导体学报(英文版), 2004, 25(7): 778-783.
      shu

      • Received Date: 2015-08-19

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