Chin. J. Semicond. > 1986, Volume 7 > Issue 2 > 190-195
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Insb表面损伤层的光谱特性和损伤层厚度的测量

张春平 , 张光寅 , 常甲辰 , 商美茹 and 孙迺寅

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    Received: 20 August 2015 Revised: Online: Published: 01 February 1986

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      Article Navigation >  Journal of Semiconductors  > 1986  >  7(2): 190-195
      张春平, 张光寅, 常甲辰, 商美茹, 孙迺寅. Insb表面损伤层的光谱特性和损伤层厚度的测量[J]. 半导体学报(英文版), 1986, 7(2): 190-195.
      Citation:
      张春平, 张光寅, 常甲辰, 商美茹, 孙迺寅. Insb表面损伤层的光谱特性和损伤层厚度的测量[J]. 半导体学报(英文版), 1986, 7(2): 190-195.
      shu

      • Received Date: 2015-08-20

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