Citation: |
Wu Yiping, 张金松, Zhang Jinsong, Wu Fengshun. Electromigration of SnAgCu Solder Interconnects[J]. Journal of Semiconductors, 2006, 27(6): 1136-1140.
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Wu Y P, Zhang J S, Wu F S. Electromigration of SnAgCu Solder Interconnects[J]. Chin. J. Semicond., 2006, 27(6): 1136.
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Electromigration of SnAgCu Solder Interconnects
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Abstract
The electromigration (EM) of Sn96Ag3.5Cu0.5 solder interconnects is studied with Ni diffusion-barrier layers.The results show that at 180℃,intermetallic-compounds (IMCs) move in the direction of electron-flow and their evolution pre-sents a unique polarity effect.IMCs ripen,split,and migrate from the Ni/solder interface at the cathode,while accumulate at the anode area nearby.This IMC migration generates mass depletion at the cathode,which causes void nucleation and propagation on the UBM/solder interface.Large voids increase the measured resistance and deteriorate the conductive path noticeably,thereby seriously degrade the solder interconnect reliability. -
References
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