Chin. J. Semicond. > 2000, Volume 21 > Issue 7 > 686-690
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用SIPOS-SiO_2复合层对4H-SiCn~+pp~+结构钝化的分析

姜岩峰 , 李思渊 , 刘肃 , 曹磊 and 薄建军

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Key words: SiC, 钝化层

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    Received: 20 August 2015 Revised: Online: Published: 01 July 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(7): 686-690
      姜岩峰, 李思渊, 刘肃, 曹磊, 薄建军. 用SIPOS-SiO_2复合层对4H-SiCn~+pp~+结构钝化的分析[J]. 半导体学报(英文版), 2000, 21(7): 686-690.
      Citation:
      姜岩峰, 李思渊, 刘肃, 曹磊, 薄建军. 用SIPOS-SiO_2复合层对4H-SiCn~+pp~+结构钝化的分析[J]. 半导体学报(英文版), 2000, 21(7): 686-690.
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      • Received Date: 2015-08-20

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