Chin. J. Semicond. > 2005, Volume 26 > Issue 7 > 1434-1436
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CF4预处理后热生长薄栅氧漏电流及势垒研究

刘倜 and 欧文

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Key words: Flash memory, 漏电流, 电子势垒, F化隧穿氧化层

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    Received: 18 August 2015 Revised: Online: Published: 01 July 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(7): 1434-1436
      刘倜, 欧文. CF4预处理后热生长薄栅氧漏电流及势垒研究[J]. 半导体学报(英文版), 2005, 26(7): 1434-1436.
      Citation:
      刘倜, 欧文. CF4预处理后热生长薄栅氧漏电流及势垒研究[J]. 半导体学报(英文版), 2005, 26(7): 1434-1436.
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      • Received Date: 2015-08-18

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