| Citation: |
Wang Chong, Zhang Jinfeng, 杨燕, Yang Yan, Hao Yue, Feng Qian. Temperature Characteristics of AlGaN/GaN HEMTs Using C-Vand TLM for Evaluating Temperatures[J]. Journal of Semiconductors, 2006, 27(5): 864-868.
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Wang C, Zhang J F, Yang Y, Hao Y, Feng Q. Temperature Characteristics of AlGaN/GaN HEMTs Using C-Vand TLM for Evaluating Temperatures[J]. Chin. J. Semicond., 2006, 27(5): 864.
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Temperature Characteristics of AlGaN/GaN HEMTs Using C-Vand TLM for Evaluating Temperatures
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Abstract
The DC characteristics of AlGaN/GaN HEMTs are measured in a temperature range from 25 to 200℃. On the same wafer, Schottky C-V and transmission line model measurements are carried out at different temperatures.The temperature dependence of the distribution of the two-dimensional electron gas,the sheet resistance,the ohmic specific contact resistance,and the buffer leakage current are analyzed.We conclude that the reduced saturation current is mainly due to the degradation of the electron transport property.The channel leakage current arises from the gate leakage current,and the leakage of the GaN buffer layer plays a secondary role.-
Keywords:
- high electron mobility transistors,
- 2DEG,
- TLM,
- leakage current
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References
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Proportional views
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