| Citation: |
Ge Ji, Jin Zhi, Liu Xinyu, Cheng Wei, Wang Xiantai, Chen Gaopeng, Wu Dexin. A VBIC Model with Voltage-Dependent Carrier Velocity and Depletion-Layer Thickness[J]. Journal of Semiconductors, 2008, 29(11): 2270-2274.
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Ge J, Jin Z, Liu X Y, Cheng W, Wang X T, Chen G P, Wu D X. A VBIC Model with Voltage-Dependent Carrier Velocity and Depletion-Layer Thickness[J]. J. Semicond., 2008, 29(11): 2270.
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A VBIC Model with Voltage-Dependent Carrier Velocity and Depletion-Layer Thickness
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Abstract
The voltage-dependent carrier velocity and the depletion-layer thickness in the collector of a GaAs-based HBT have been investigated.The formulation of the voltage-dependent collector transit time has been established.An improved vertical bipolar inter-company (VBIC) model with the collector transit time has been developed.The model more accurately predicts S-parameters over a wide range of the bias voltage than the VBIC model. -
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