A VBIC Model with Voltage-Dependent Carrier Velocity and Depletion-Layer Thickness

Ge Ji; Jin Zhi; Liu Xinyu; Cheng Wei; Wang Xiantai; Chen Gaopeng; Wu Dexin

J. Semicond. > 2008, Volume 29 > Issue 11 > 2270-2274

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A VBIC Model with Voltage-Dependent Carrier Velocity and Depletion-Layer Thickness

Ge Ji, Jin Zhi, Liu Xinyu, Cheng Wei, Wang Xiantai, Chen Gaopeng and Wu Dexin

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Abstract: The voltage-dependent carrier velocity and the depletion-layer thickness in the collector of a GaAs-based HBT have been investigated.The formulation of the voltage-dependent collector transit time has been established.An improved vertical bipolar inter-company (VBIC) model with the collector transit time has been developed.The model more accurately predicts S-parameters over a wide range of the bias voltage than the VBIC model.

Key words: carrier velocity, depletion-layer thickness, collector transit time, VBIC model

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Ge Ji, Jin Zhi, Liu Xinyu, Cheng Wei, Wang Xiantai, Chen Gaopeng, Wu Dexin. A VBIC Model with Voltage-Dependent Carrier Velocity and Depletion-Layer Thickness[J]. Journal of Semiconductors, 2008, 29(11): 2270-2274.

Ge J, Jin Z, Liu X Y, Cheng W, Wang X T, Chen G P, Wu D X. A VBIC Model with Voltage-Dependent Carrier Velocity and Depletion-Layer Thickness[J]. J. Semicond., 2008, 29(11): 2270.

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Received: 18 August 2015 Revised: 08 July 2008 Online: Published: 01 November 2008

The voltage-dependent carrier velocity and the depletion-layer thickness in the collector of a GaAs-based HBT have been investigated.The formulation of the voltage-dependent collector transit time has been established.An improved vertical bipolar inter-company (VBIC) model with the collector transit time has been developed.The model more accurately predicts S-parameters over a wide range of the bias voltage than the VBIC model.

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