| Citation: |
Zhang Yuezong, Feng Shiwei, Xie Xuesong, Li Ying, Yang Ji, Sun Jingying, Lü Changzhi. Study of Thermal Characteristics of Semiconductor Light-Emitting Devices[J]. Journal of Semiconductors, 2006, 27(2): 350-353.
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Zhang Y Z, Feng S W, Xie X S, Li Y, Yang J, Sun J Y, Lü C. Study of Thermal Characteristics of Semiconductor Light-Emitting Devices[J]. Chin. J. Semicond., 2006, 27(2): 350.
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Study of Thermal Characteristics of Semiconductor Light-Emitting Devices
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Abstract
The heating response curves of temperature rise and thermal resistance of semiconductor power emitting-lighting diodes are obtained according to electrical methods.The curve shows one or more sidesteps to reflect device’s inside thermal resistance constitution and physical structure.The temperature rise and thermal resistance are amended with a covering method.A transient heating response theory is also used to inspect the package structure of the devices. -
References
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