Chin. J. Semicond. > 1982, Volume 3 > Issue 3 > 192-196
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由MOS结构对线性电压扫描的瞬态响应测定产生寿命和表面产生速度

张秀淼 , 包宗明 and 苏九令

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1982

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      Article Navigation >  Journal of Semiconductors  > 1982  >  3(3): 192-196
      张秀淼, 包宗明, 苏九令. 由MOS结构对线性电压扫描的瞬态响应测定产生寿命和表面产生速度[J]. 半导体学报(英文版), 1982, 3(3): 192-196.
      Citation:
      张秀淼, 包宗明, 苏九令. 由MOS结构对线性电压扫描的瞬态响应测定产生寿命和表面产生速度[J]. 半导体学报(英文版), 1982, 3(3): 192-196.
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      • Received Date: 2015-08-20

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