Chin. J. Semicond. > 1998, Volume 19 > Issue 10 > 740-744
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富硅量不同的富硅二氧化硅薄膜的光致发光研究

马书懿 , 秦国刚 , 马振昌 , 宗婉华 , 吴正龙 , 姚光庆 and 孟祥提

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    Received: 18 August 2015 Revised: Online: Published: 01 October 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(10): 740-744
      马书懿, 秦国刚, 马振昌, 宗婉华, 吴正龙, 姚光庆, 孟祥提. 富硅量不同的富硅二氧化硅薄膜的光致发光研究[J]. 半导体学报(英文版), 1998, 19(10): 740-744.
      Citation:
      马书懿, 秦国刚, 马振昌, 宗婉华, 吴正龙, 姚光庆, 孟祥提. 富硅量不同的富硅二氧化硅薄膜的光致发光研究[J]. 半导体学报(英文版), 1998, 19(10): 740-744.
      shu

      • Received Date: 2015-08-18

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