Chin. J. Semicond. > 2004, Volume 25 > Issue 5 > 589-593
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高铝Al_xGa_(1-x)As氧化层对垂直腔面发射激光器的影响

康香宁 , 宋国峰 , 叶晓军 , 侯识华 and 陈良惠

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Key words: AlxGa1-xAs湿氮选择氧化, 微区光致发光谱, 垂直腔面发射激光器

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    Received: 19 August 2015 Revised: Online: Published: 01 May 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(5): 589-593
      康香宁, 宋国峰, 叶晓军, 侯识华, 陈良惠. 高铝Al_xGa_(1-x)As氧化层对垂直腔面发射激光器的影响[J]. 半导体学报(英文版), 2004, 25(5): 589-593.
      Citation:
      康香宁, 宋国峰, 叶晓军, 侯识华, 陈良惠. 高铝Al_xGa_(1-x)As氧化层对垂直腔面发射激光器的影响[J]. 半导体学报(英文版), 2004, 25(5): 589-593.
      shu

      • Received Date: 2015-08-19

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