| Citation: |
Wang Rong, Liu Yunhong, Sun Xufang, Cui Xinyu. Low-Energy Proton Irradiation Effects of GaInP/GaAs/Ge Triple-Junction Solar Cells for Space Use[J]. Journal of Semiconductors, 2007, 28(10): 1599-1602.
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Wang R, Liu Y H, Sun X F, Cui X Y. Low-Energy Proton Irradiation Effects of GaInP/GaAs/Ge Triple-Junction Solar Cells for Space Use[J]. Chin. J. Semicond., 2007, 28(10): 1599.
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Low-Energy Proton Irradiation Effects of GaInP/GaAs/Ge Triple-Junction Solar Cells for Space Use
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Abstract
GaInP/GaAs/Ge triple-junction (3J) solar cells fabricated by metal-organic chemical vapor deposition were irradiated with 0.28,0.62,and 2.80MeV protons at doses ranging from 1e10 to 1e13cm-2 using a 2×1.7MV tandem accelerator.The performance degradation of the 3J solar cells was analyzed with current-voltage characteristics and spectral response measurements.The degradation rates of the short circuit current (Isc),open circuit voltage (Voc),and maximum power output (Pmax) were found to increase as the proton irradiation dose increased,but the degradation rates of Isc,Voc,and Pmax decreased as the proton irradiation energy increased.Irradiation with a proton energy of 0.28MeV gave rise to the highest degradation rates of Isc,Voc,and Pmax of the solar cells.Also,the spectral response of the GaAs middle cell in 3J solar cells was degraded more significantly than the GaInP top cell. -
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