Citation: |
Ma Xiaocui, Liu Wenjun, Zhu Deliang, Cao Peijiang, Jiang Zongzhang, Xiao Huojie. Effects of Oxygen Content on the Crystal Quality of ZnO Films Grown on Si by RF-Magnetron Sputtering[J]. Journal of Semiconductors, 2007, 28(S1): 160-162.
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Ma X C, Liu W J, Zhu D L, Cao P J, Jiang Z Z, Xiao H J. Effects of Oxygen Content on the Crystal Quality of ZnO Films Grown on Si by RF-Magnetron Sputtering[J]. Chin. J. Semicond., 2007, 28(S1): 160.
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Effects of Oxygen Content on the Crystal Quality of ZnO Films Grown on Si by RF-Magnetron Sputtering
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Abstract
We report the effects of the growth ambient on the crystal quality of ZnO films grown on Si by RF-magnetron sputtering using ZnO target.These films are highly c-axis oriented.Upon increasing the O2/(Ar+O2)ratio in the growing ambient,the deposition rate is decreased for ZnO films.The crystallinity and alignment of ZnO films are strongly dependent on O2/(At+O2) ratio,and the crystal quality of the ZnO films at O2/(At十O2) ratio≈0.45 is better than others. -
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