Chin. J. Semicond. > 2003, Volume 24 > Issue 3 > 290-297
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用二次离子质谱和扩展电阻探针技术测量硅中注入硼的深度分布及扩展电阻探针技术分辨率的估算

杨恒青 , 颜佳骅 , 陈俭 and 曹永明

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Key words: 扩展电阻, 分辨率, 二次离子质谱, 硼离子注入

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    Received: 20 August 2015 Revised: Online: Published: 01 March 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(3): 290-297
      杨恒青, 颜佳骅, 陈俭, 曹永明. 用二次离子质谱和扩展电阻探针技术测量硅中注入硼的深度分布及扩展电阻探针技术分辨率的估算[J]. 半导体学报(英文版), 2003, 24(3): 290-297.
      Citation:
      杨恒青, 颜佳骅, 陈俭, 曹永明. 用二次离子质谱和扩展电阻探针技术测量硅中注入硼的深度分布及扩展电阻探针技术分辨率的估算[J]. 半导体学报(英文版), 2003, 24(3): 290-297.
      shu

      • Received Date: 2015-08-20

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