| Citation: |
Hao Ruiting, Xu Yingqiang, Zhou Zhiqiang, Ren Zhengwei, Niu Zhichuan. GaSb Bulk Materials and InAs/GaSb Superlattices Grown by MBE on GaAs Substrates[J]. Journal of Semiconductors, 2007, 28(7): 1088-1091.
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Hao R T, Xu Y Q, Zhou Z Q, Ren Z W, Niu Z C. GaSb Bulk Materials and InAs/GaSb Superlattices Grown by MBE on GaAs Substrates[J]. Chin. J. Semicond., 2007, 28(7): 1088.
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GaSb Bulk Materials and InAs/GaSb Superlattices Grown by MBE on GaAs Substrates
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Abstract
GaSb thick layers were grown by molecular beam epitaxy on GaAs(100)substrates.High quality InAs/GaSb superlattices(SLs)with different InAs thicknesses were grown on GaSb buffer layers on GaAs substrates.The peak wavelengths of photoluminescence spectra at 10K are between 2~2.6μm.High-resolution transmission electron microscopy shows that the SLs have clear interface and integrated periods.-
Keywords:
- molecular beam epitaxy,
- GaAs,
- GaSb,
- InAs/GaSb superlattices
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References
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Proportional views
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