Chin. J. Semicond. > 2001, Volume 22 > Issue 10 > 1231-1234

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优化了栅电极溅射工艺的难熔金属栅MOS电容的性能(英文)

李瑞钊 and 徐秋霞

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Key words: 亚0 1μm代, 难熔金属栅, 溅射工艺, 表面态

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    Received: 20 August 2015 Revised: Online: Published: 01 October 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(10): 1231-1234
      李瑞钊, 徐秋霞. 优化了栅电极溅射工艺的难熔金属栅MOS电容的性能(英文)[J]. 半导体学报(英文版), 2001, 22(10): 1231-1234.
      Citation:
      李瑞钊, 徐秋霞. 优化了栅电极溅射工艺的难熔金属栅MOS电容的性能(英文)[J]. 半导体学报(英文版), 2001, 22(10): 1231-1234.
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      • Received Date: 2015-08-20

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