Chin. J. Semicond. > 1984, Volume 5 > Issue 1 > 48-55
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样品厚度对表面光电压法测试少子扩散长度的影响

杨恒青 , 姜国庆 , 陈玉金 and 包宗明

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    Received: 20 August 2015 Revised: Online: Published: 01 January 1984

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      Article Navigation >  Journal of Semiconductors  > 1984  >  5(1): 48-55
      杨恒青, 姜国庆, 陈玉金, 包宗明. 样品厚度对表面光电压法测试少子扩散长度的影响[J]. 半导体学报(英文版), 1984, 5(1): 48-55.
      Citation:
      杨恒青, 姜国庆, 陈玉金, 包宗明. 样品厚度对表面光电压法测试少子扩散长度的影响[J]. 半导体学报(英文版), 1984, 5(1): 48-55.
      shu

      • Received Date: 2015-08-20

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