2D Materials and Devices
2-dimensional (2D) materials have attracted increasing attention in recent years due to novel properties and potential for industrial application. With the rapid developments of both top-down and bottom-up synthesis methods, a lot of new 2D materials beyond graphene have been uncovered, such as BN sheet, silicene, graphdiyne, transition metal chalcogenides and black phosphorus etc. This issue brings along 5 reviews and 7 research papers and discusses the synthesis, properties, band structure modulation, and quantum transport in various 2D materials.
Preface to the Special Topic on 2D Materials and Devices
J. Semicond. 2017, 38(3): 031001
Optoelectronics based on 2D TMDs and heterostructures
J. Semicond. 2017, 38(3): 031002
Recent progress in synthesis of two-dimensional hexagonal boron nitride
J. Semicond. 2017, 38(3): 031003
J. Semicond. 2017, 38(3): 031004
Devices and applications of van der Waals heterostructures
J. Semicond. 2017, 38(3): 031005
J. Semicond. 2017, 38(3): 031006
Effects of vertical electric field and compressive strain on electronic properties of bilayer ZrS2
J. Semicond. 2017, 38(3): 033001
Ab initio electronic transport study of two-dimensional silicon carbide-based p-n junctions
J. Semicond. 2017, 38(3): 033002
Investigation of multilayer domains in large-scale CVD monolayer graphene by optical imaging
J. Semicond. 2017, 38(3): 033003
Manganese and chromium doping in atomically thin MoS2
J. Semicond. 2017, 38(3): 033004
Carbon-doping-induced negative differential resistance in armchair phosphorene nanoribbons
J. Semicond. 2017, 38(3): 033005
Photoresponsive field-effect transistors based on multilayer SnS2 nanosheets
J. Semicond. 2017, 38(3): 034001
Enhancement of photodetection based on perovskite/MoS2 hybrid thin film transistor
J. Semicond. 2017, 38(3): 034002