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  • 2D Materials and Devices

    2-dimensional (2D) materials have attracted increasing attention in recent years due to novel properties and potential for industrial application. With the rapid developments of both top-down and bottom-up synthesis methods, a lot of new 2D materials beyond graphene have been uncovered, such as BN sheet, silicene, graphdiyne, transition metal chalcogenides and black phosphorus etc. This issue brings along 5 reviews and 7 research papers and discusses the synthesis, properties, band structure modulation, and quantum transport in various 2D materials.

  • Preface to the Special Topic on 2D Materials and Devices

    Jingbo Li, Xinran Wang

    J. Semicond. 2017, 38(3): 031001

    doi: 10.1088/1674-4926/38/3/031001

    Optoelectronics based on 2D TMDs and heterostructures

    Nengjie Huo, Yujue Yang, Jingbo Li

    J. Semicond. 2017, 38(3): 031002

    doi: 10.1088/1674-4926/38/3/031002

    Recent progress in synthesis of two-dimensional hexagonal boron nitride

    Haolin Wang, Yajuan Zhao, Yong Xie, Xiaohua Ma, Xingwang Zhang

    J. Semicond. 2017, 38(3): 031003

    doi: 10.1088/1674-4926/38/3/031003

    Recent advances in preparation,properties and device applications of two-dimensional h-BN and its vertical heterostructures

    Huihui Yang, Feng Gao, Mingjin Dai, Dechang Jia, Yu Zhou, Ping'an Hu

    J. Semicond. 2017, 38(3): 031004

    doi: 10.1088/1674-4926/38/3/031004

    Devices and applications of van der Waals heterostructures

    Chao Li, Peng Zhou, David Wei Zhang

    J. Semicond. 2017, 38(3): 031005

    doi: 10.1088/1674-4926/38/3/031005

    Layer-number dependent high-frequency vibration modes in few-layer transition metal dichalcogenides induced by interlayer couplings

    Qing-Hai Tan, Xin Zhang, Xiang-Dong Luo, Jun Zhang, Ping-Heng Tan

    J. Semicond. 2017, 38(3): 031006

    doi: 10.1088/1674-4926/38/3/031006

    Effects of vertical electric field and compressive strain on electronic properties of bilayer ZrS2

    Jimin Shang, Le Huang, Zhongming Wei

    J. Semicond. 2017, 38(3): 033001

    doi: 10.1088/1674-4926/38/3/033001

    Ab initio electronic transport study of two-dimensional silicon carbide-based p-n junctions

    Hanming Zhou, Xiao Lin, Hongwei Guo, Shisheng Lin, Yiwei Sun, Yang Xu

    J. Semicond. 2017, 38(3): 033002

    doi: 10.1088/1674-4926/38/3/033002

    Investigation of multilayer domains in large-scale CVD monolayer graphene by optical imaging

    Yuanfang Yu, Zhenzhen Li, Wenhui Wang, Xitao Guo, Jie Jiang, Haiyan Nan, Zhenhua Ni

    J. Semicond. 2017, 38(3): 033003

    doi: 10.1088/1674-4926/38/3/033003

    Manganese and chromium doping in atomically thin MoS2

    Ce Huang, Yibo Jin, Weiyi Wang, Lei Tang, Chaoyu Song, Faxian Xiu

    J. Semicond. 2017, 38(3): 033004

    doi: 10.1088/1674-4926/38/3/033004

    Carbon-doping-induced negative differential resistance in armchair phosphorene nanoribbons

    Caixia Guo, Congxin Xia, Tianxing Wang, Yufang Liu

    J. Semicond. 2017, 38(3): 033005

    doi: 10.1088/1674-4926/38/3/033005

    Photoresponsive field-effect transistors based on multilayer SnS2 nanosheets

    Yan Wang, Le Huang, Zhongming Wei

    J. Semicond. 2017, 38(3): 034001

    doi: 10.1088/1674-4926/38/3/034001

    Enhancement of photodetection based on perovskite/MoS2 hybrid thin film transistor

    Fengjing Liu, Jiawei Wang, Liang Wang, Xiaoyong Cai, Chao Jiang, Gongtang Wang

    J. Semicond. 2017, 38(3): 034002

    doi: 10.1088/1674-4926/38/3/034002

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