Journal of Semiconductors

2D Materials and Devices

2-dimensional (2D) materials have attracted increasing attention in recent years due to novel properties and potential for industrial application. With the rapid developments of both top-down and bottom-up synthesis methods, a lot of new 2D materials beyond graphene have been uncovered, such as BN sheet, silicene, graphdiyne, transition metal chalcogenides and black phosphorus etc. This issue brings along 5 reviews and 7 research papers and discusses the synthesis, properties, band structure modulation, and quantum transport in various 2D materials.
Preface to the Special Topic on 2D Materials and Devices

Jingbo Li, Xinran Wang

J. Semicond. 2017, 38(3): 031001

doi: 10.1088/1674-4926/38/3/031001

Optoelectronics based on 2D TMDs and heterostructures

Nengjie Huo, Yujue Yang, Jingbo Li

J. Semicond. 2017, 38(3): 031002

doi: 10.1088/1674-4926/38/3/031002

Recent progress in synthesis of two-dimensional hexagonal boron nitride

Haolin Wang, Yajuan Zhao, Yong Xie, Xiaohua Ma, Xingwang Zhang

J. Semicond. 2017, 38(3): 031003

doi: 10.1088/1674-4926/38/3/031003

Recent advances in preparation,properties and device applications of two-dimensional h-BN and its vertical heterostructures

Huihui Yang, Feng Gao, Mingjin Dai, Dechang Jia, Yu Zhou, Ping'an Hu

J. Semicond. 2017, 38(3): 031004

doi: 10.1088/1674-4926/38/3/031004

Devices and applications of van der Waals heterostructures

Chao Li, Peng Zhou, David Wei Zhang

J. Semicond. 2017, 38(3): 031005

doi: 10.1088/1674-4926/38/3/031005

Layer-number dependent high-frequency vibration modes in few-layer transition metal dichalcogenides induced by interlayer couplings

Qing-Hai Tan, Xin Zhang, Xiang-Dong Luo, Jun Zhang, Ping-Heng Tan

J. Semicond. 2017, 38(3): 031006

doi: 10.1088/1674-4926/38/3/031006

Effects of vertical electric field and compressive strain on electronic properties of bilayer ZrS₂

Jimin Shang, Le Huang, Zhongming Wei

J. Semicond. 2017, 38(3): 033001

doi: 10.1088/1674-4926/38/3/033001

Ab initio electronic transport study of two-dimensional silicon carbide-based p-n junctions

Hanming Zhou, Xiao Lin, Hongwei Guo, Shisheng Lin, Yiwei Sun, Yang Xu

J. Semicond. 2017, 38(3): 033002

doi: 10.1088/1674-4926/38/3/033002

Investigation of multilayer domains in large-scale CVD monolayer graphene by optical imaging

Yuanfang Yu, Zhenzhen Li, Wenhui Wang, Xitao Guo, Jie Jiang, Haiyan Nan, Zhenhua Ni

J. Semicond. 2017, 38(3): 033003

doi: 10.1088/1674-4926/38/3/033003

Manganese and chromium doping in atomically thin MoS₂

Ce Huang, Yibo Jin, Weiyi Wang, Lei Tang, Chaoyu Song, Faxian Xiu

J. Semicond. 2017, 38(3): 033004

doi: 10.1088/1674-4926/38/3/033004

Carbon-doping-induced negative differential resistance in armchair phosphorene nanoribbons

Caixia Guo, Congxin Xia, Tianxing Wang, Yufang Liu

J. Semicond. 2017, 38(3): 033005

doi: 10.1088/1674-4926/38/3/033005

Photoresponsive field-effect transistors based on multilayer SnS₂ nanosheets

Yan Wang, Le Huang, Zhongming Wei

J. Semicond. 2017, 38(3): 034001

doi: 10.1088/1674-4926/38/3/034001

Enhancement of photodetection based on perovskite/MoS₂ hybrid thin film transistor

Fengjing Liu, Jiawei Wang, Liang Wang, Xiaoyong Cai, Chao Jiang, Gongtang Wang

J. Semicond. 2017, 38(3): 034002

doi: 10.1088/1674-4926/38/3/034002