Ultra-Wide Bandgap Semiconductor Gallium Oxide: from Materials to Devices



Guest Editors:

Xutang Tao

Jiandong Ye

Shibing Long

Zhitai Jia
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Growth and fundamentals of bulk β-Ga2O3 single crystals
2019, 40(1): 011801, doi: 10.1088/1674-4926/40/1/011801
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Source-field-plated Ga2O3 MOSFET with a breakdown voltage of 550 V
2019, 40(1): 012803, doi: 10.1088/1674-4926/40/1/012803
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