Journal of Semiconductors

Ultra-Wide Bandgap Semiconductor Gallium Oxide: from Materials to Devices

Guest Editors:

Xutang Tao

Jiandong Ye

Shibing Long

Zhitai Jia

Preface to the Special Issue on Ultra-Wide Bandgap Semiconductor Gallium Oxide: from Materials to Devices

Xutang Tao, Jiandong Ye, Shibing Long, Zhitai Jia

2019, 40(1): 010101, doi: 10.1088/1674-4926/40/1/010101
Growth and fundamentals of bulk β-Ga₂O₃ single crystals

H. F. Mohamed, Changtai Xia, Qinglin Sai, Huiyuan Cui, Mingyan Pan, Hongji Qi

2019, 40(1): 011801, doi: 10.1088/1674-4926/40/1/011801
Progress of power field effect transistor based on ultra-wide bandgap Ga₂O₃ semiconductor material

Hang Dong, Huiwen Xue, Qiming He, Yuan Qin, Guangzhong Jian, Shibing Long, Ming Liu

2019, 40(1): 011802, doi: 10.1088/1674-4926/40/1/011802
A review of the most recent progresses of state-of-art gallium oxide power devices

Hong Zhou, Jincheng Zhang, Chunfu Zhang, Qian Feng, Shenglei Zhao, Peijun Ma, Yue Hao

2019, 40(1): 011803, doi: 10.1088/1674-4926/40/1/011803
A review of β-Ga₂O₃ single crystal defects, their effects on device performance and their formation mechanism

Bo Fu, Zhitai Jia, Wenxiang Mu, Yanru Yin, Jian Zhang, Xutang Tao

2019, 40(1): 011804, doi: 10.1088/1674-4926/40/1/011804
Application of halide vapor phase epitaxy for the growth of ultra-wide band gap Ga₂O₃

Xiangqian Xiu, Liying Zhang, Yuewen Li, Zening Xiong, Rong Zhang, Youdou Zheng

2019, 40(1): 011805, doi: 10.1088/1674-4926/40/1/011805
Temperature-dependent electrical properties of β-Ga₂O₃ Schottky barrier diodes on highly doped single-crystal substrates

Tsung-Han Yang, Houqiang Fu, Hong Chen, Xuanqi Huang, Jossue Montes, Izak Baranowski, Kai Fu, Yuji Zhao

2019, 40(1): 012801, doi: 10.1088/1674-4926/40/1/012801
β-Ga₂O₃ thin film grown on sapphire substrate by plasma-assisted molecular beam epitaxy

Jiaqi Wei, Kumsong Kim, Fang Liu, Ping Wang, Xiantong Zheng, Zhaoying Chen, Ding Wang, Ali Imran, Xin Rong, Xuelin Yang, Fujun Xu, Jing Yang, Bo Shen, Xinqiang Wang

2019, 40(1): 012802, doi: 10.1088/1674-4926/40/1/012802
Source-field-plated Ga₂O₃ MOSFET with a breakdown voltage of 550 V

Yuanjie Lü, Xubo Song, Zezhao He, Yuangang Wang, Xin Tan, Shixiong Liang, Cui Wei, Xingye Zhou, Zhihong Feng

2019, 40(1): 012803, doi: 10.1088/1674-4926/40/1/012803
Heteroepitaxial growth of thick α-Ga₂O₃ film on sapphire (0001) by MIST-CVD technique

Tongchuan Ma, Xuanhu Chen, Fangfang Ren, Shunming Zhu, Shulin Gu, Rong Zhang, Youdou Zheng, Jiandong Ye

2019, 40(1): 012804, doi: 10.1088/1674-4926/40/1/012804
Current transport mechanism of Mg/Au ohmic contacts to lightly doped n-type β-Ga₂O₃

Jianjun Shi, Xiaochuan Xia, Qasim Abbas, Jun Liu, Heqiu Zhang, Yang Liu, Hongwei Liang

2019, 40(1): 012805, doi: 10.1088/1674-4926/40/1/012805
Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH₃ plasma pretreatment

Hui Hao, Xiao Chen, Zhengcheng Li, Yang Shen, Hu Wang, Yanfei Zhao, Rong Huang, Tong Liu, Jian Liang, Yuxin An, Qing Peng, Sunan Ding

2019, 40(1): 012806, doi: 10.1088/1674-4926/40/1/012806

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