Special Issue on Towards High Performance Ga2O3 Electronics: Epitaxial Growth and Power Devices (Ⅰ)
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Guest Editors:
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Genquan Han
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Shibing Long
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Yuhao Zhang
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Yibo Wang
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Zhongming Wei
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Recent advances in NiO/Ga2O3 heterojunctions for power electronics
2023, 44(6): 061802, doi: 10.1088/1674-4926/44/6/061802
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Homoepitaxial growth of (100) Si-doped β-Ga2O3 films via MOCVD
2023, 44(6): 062801, doi: 10.1088/1674-4926/44/6/062801
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Rapid epitaxy of 2-inch and high-quality α-Ga2O3 films by mist-CVD method
2023, 44(6): 062803, doi: 10.1088/1674-4926/44/6/062803
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