Temperature dependent interfacial and electrical characteristics during atomic layer deposition and annealing of HfO<sub>2</sub> films in p-GaAs metal-oxide-semiconductor capacitors

Chen Liu; Yuming Zhang; Yimen Zhang; Hongliang Lü; Bin Lu

doi:10.1088/1674-4926/36/12/124003

Abstract: We have investigated the temperature dependent interfacial and electrical characteristics of p-GaAs metal-oxide-semiconductor capacitors during atomic layer deposition(ALD) and annealing of HfO₂ using the tetrakis(ethylmethyl) amino hafnium precursor. The leakage current decreases with the increase of the ALD temperature and the lowest current is obtained at 300℃ as a result of the Frenkel-Poole conduction induced leakage current being greatly weakened by the reduction of interfacial oxides at the higher temperature. Post deposition annealing(PDA) at 500℃ after ALD at 300℃ leads to the lowest leakage current compared with other annealing temperatures. A pronounced reduction in As oxides during PDA at 500℃ has been observed using X-ray photoelectron spectroscopy at the interface resulting in a proportional increase in Ga₂O₃. The increment of Ga₂O₃ after PDA depends on the amount of residual As oxides after ALD. Thus, the ALD temperature plays an important role in determining the high-k/GaAs interface condition. Meanwhile, an optimum PDA temperature is essential for obtaining good dielectric properties.

Key words: GaAs metal-oxide-semiconductor capacitor, temperature, interface, leakage current

References:

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[27]	Oh H, Lin J, Lee S. Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high-k gate dielectrics using X-ray photoelectron spectroscopy[J]. Appl Phys Lett, 2008, 93: 062107.
[28]	Dalapati G K, Tong Y, Loh W Y. Electrical and interfacial characterization of atomic layer deposited high-k gate dielectrics on GaAs for advanced CMOS devices[J]. IEEE Trans Electron Devices, 2007, 54: 1831.
[29]	Gilmer D, Hegde R, Cotton R. Compatibility of polycrystalline silicon gate deposition with HfO₂ and Al₂O₃/HfO₂ gate dielectrics[J]. Appl Phys Lett, 2002, 81: 1288.
[30]	Hackley J C, Demaree J D, Gougousi T. Growth and interface of HfO₂ films on H-terminated Si from a TDMAH and H₂O atomic layer deposition process[J]. J Vac Sci Technol A, 2008, 26: 1235.
[31]	Hinkle C, Sonnet A, Milojevic M. Comparison of n-type and p-type GaAs oxide growth and its effects on frequency dispersion characteristics[J]. Appl Phys Lett, 2008, 93: 113506.
[32]	Thurmond C, Schwartz G, Kammlott G. GaAs oxidation and the Ga-As-O equilibrium phase diagram[J]. J Electrochem Soc, 1980, 127: 1366.

[1]	Yamasaki K, Asai K, Mizutani T. Self-align implantation for n⁺-layer technology(SAINT) for high-speed GaAs ICs[J]. Electron Lett, 1982, 18: 119.
[2]	Datta S, Dewey G, Fastenau J. Ultrahigh-speed 0.5 V supply voltage In_0.7Ga_0.3As quantum-well transistors on silicon substrate[J]. IEEE Electron Device Lett, 2007, 28: 685.
[3]	McMorrow D, Boos J B, Knudson A R. Charge-collection characteristics of low-power ultrahigh speed, metamorphic AlSb/InAs high-electron mobility transistors(HEMTs)[J]. IEEE Trans Nucl Sci, 2000, 47: 2662.
[4]	Del Alamo J A. Nanometre-scale electronics with Ⅲ-V compound semiconductors[J]. Nature, 2011, 479: 317.
[5]	Zhu S Y, Xu J P, Wang L S. Compare of interfacial and electrical properties between Al₂O₃ and ZnO as interfacial passivation layer of GaAs MOS device with HfTiO gate dielectric[J]. Journal of Semiconductors, 2015, 36: 034006.
[6]	Martens K, Wang W, De K K. Impact of weak Fermi-level pinning on the correct interpretation of Ⅲ-V MOS CV and GV characteristics[J]. Microelectron Eng, 2007, 84: 2146.
[7]	Liu C, Zhang Y M, Zhang Y M. Interfacial characteristics of Al/Al₂O₃/ZnO/n-GaAs MOS capacitor[J]. Chin Phys B, 2013, 22: 076701.
[8]	He G, Zhang L D, Liu M. HfO₂-GaAs metal-oxide-semiconductor capacitor using dimethylaluminumhydride-derived aluminum oxynitride interfacial passivation layer[J]. Appl Phys Lett, 2010, 97: 062908.
[9]	Koveshnikov S, Tsai W, Ok I. Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer[J]. Appl Phys Lett, 2006, 88: 022106.
[10]	Wieder H. Surface Fermi level of Ⅲ-V compound semiconductor-dielectric interfaces[J]. Surf Sci, 1983, 132: 390.
[11]	Robertson J. Model of interface states at Ⅲ-V oxide interfaces[J]. Appl Phys Lett, 2009, 94: 152104.
[12]	Passlack M, Hong M J. Quasistatic and high frequency capacitance-voltage characterization of Ga₂O₃-GaAs structures fabricated by in situ molecular beam epitaxy[J]. Appl Phys Lett, 1996, 68: 1099.
[13]	He G, Chen X S, Sun Z Q. Interface engineering and chemistry of Hf-based high-k dielectrics on Ⅲ-V substrates[J]. Surf Sci Rep, 2013, 68: 68.
[14]	He G, Liu J W, Chen H S. interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate stacks by nitrogen incorporation[J]. J Mater Chem C, 2014, 2: 5299.
[15]	Roy K, Mukhopadhyay S H. Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits[J]. Proc IEEE, 2003, 91: 305.
[16]	Gao T Q, Zhang C, Chi B Y. Design and analysis of a highly-integrated CMOS power amplifier for RFID readers[J]. Journal of Semiconductors, 2009, 30: 065008.
[17]	Li X, Cao Y, Hall D. GaAs MOSFET using InAlP native oxide as gate dielectric[J]. IEEE Electron Device Lett, 2004, 25: 772.
[18]	Lin H C, Wang W E, Brammertz G. Electrical study of sulfur passivated In_0.53Ga_0.47As MOS capacitor and transistor with ALD Al₂O₃ as gate insulator[J]. Microelectron Eng, 2009, 86: 1554.
[19]	Liu C, Zhang Y M, Zhang Y M. Effect of atomic layer deposition growth temperature on the interfacial characteristics of HfO₂/p-GaAs metal-oxide-semiconductor capacitors[J]. J Appl Phys, 2014, 116: 222207.
[20]	Aguirre T F, Milojevic M, Choi K. S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO₂/Al₂O₃ nanolaminates[J]. Appl Phys Lett, 2008, 93: 061907.
[21]	Bhattacharya M, Mukherjee M, Sanyal M. Energy dispersive X-ray reflectivity technique to study thermal properties of polymer films[J]. J Appl Phys, 2003, 94: 2882.
[22]	Milojevic M, Aguirre T F, Hinkle C. Half-cycle atomic layer deposition reaction studies of Al₂O₃ on In_0.2Ga_0.8As(100) surfaces[J]. Appl Phys Let, 2008(93): 202902.
[23]	Hinkle C, Milojevic M, Brennan B. Detection of Ga suboxides and their impact on Ⅲ-V passivation and Fermi-level pinning[J]. Appl Phys Lett, 2009, 94: 162101.
[24]	Miki H, Kunitomo M, Furukawa R. Leakage-current mechanism of a tantalum-pentoxide capacitor on rugged Si with a CVD-TiN plate electrode for high-density DRAMs[J]. Symposium VLSI Tech Dig, 1999: 99.
[25]	Dumin D, Maddux J R. Correlation of stress-induced leakage current in thin oxides with trap generation inside the oxides[J]. IEEE Trans Electron Devices, 1993, 40: 986.
[26]	Lee H D, Feng T, Yu L. Reduction of native oxides on GaAs during atomic layer growth of Al₂O₃[J]. Appl Phys Lett, 2009, 94: 222108.
[27]	Oh H, Lin J, Lee S. Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high-k gate dielectrics using X-ray photoelectron spectroscopy[J]. Appl Phys Lett, 2008, 93: 062107.
[28]	Dalapati G K, Tong Y, Loh W Y. Electrical and interfacial characterization of atomic layer deposited high-k gate dielectrics on GaAs for advanced CMOS devices[J]. IEEE Trans Electron Devices, 2007, 54: 1831.
[29]	Gilmer D, Hegde R, Cotton R. Compatibility of polycrystalline silicon gate deposition with HfO₂ and Al₂O₃/HfO₂ gate dielectrics[J]. Appl Phys Lett, 2002, 81: 1288.
[30]	Hackley J C, Demaree J D, Gougousi T. Growth and interface of HfO₂ films on H-terminated Si from a TDMAH and H₂O atomic layer deposition process[J]. J Vac Sci Technol A, 2008, 26: 1235.
[31]	Hinkle C, Sonnet A, Milojevic M. Comparison of n-type and p-type GaAs oxide growth and its effects on frequency dispersion characteristics[J]. Appl Phys Lett, 2008, 93: 113506.
[32]	Thurmond C, Schwartz G, Kammlott G. GaAs oxidation and the Ga-As-O equilibrium phase diagram[J]. J Electrochem Soc, 1980, 127: 1366.

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Temperature dependent interfacial and electrical characteristics during atomic layer deposition and annealing of HfO₂ films in p-GaAs metal-oxide-semiconductor capacitors

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