[1] |
Aydemir S, Karakaya S.
Effects of withdrawal speed on the structural and optical properties of sol-gel derived ZnO thin films[J]. J Magn Magn Mater, 2015, 373: 33.
doi: 10.1016/j.jmmm.2014.01.077
|
[2] |
Sun Guipeng, Yan Jinliang, Niu Peijiang.
Electronic structure and optical property of p-type Zn-doped SnO2 with Sn vacancy[J]. Journal of Semiconductors, 2016, 37(2): 023005.
doi: 10.1088/1674-4926/37/2/023005
|
[3] |
Ozgur U, Alivov Y I, Liu C.
A comprehensive review of ZnO materials and devices[J]. J Appl Phys, 2005, 98(4): 041301.
doi: 10.1063/1.1992666
|
[4] |
Shewale P S, Yu Y S.
Growth-temperature-dependent optical and acetone detection properties of ZnO thin films[J]. Journal of Semiconductors, 2015, 36(7): 073001.
doi: 10.1088/1674-4926/36/7/073001
|
[5] |
Benhaliliba M, Tiburcio-Silver A, Avila-Garcia A.
The sprayed ZnO films:nanostructures and physical parameters[J]. Journal of Semiconductors, 2015, 36(8): 083001.
doi: 10.1088/1674-4926/36/8/083001
|
[6] |
Suvaci E, Özer İ Ö.
Processing of textured zinc oxide varistors via templated grain growth[J]. J Eur Ceram Soc, 2005, 25: 1663.
doi: 10.1016/j.jeurceramsoc.2004.05.026
|
[7] |
Liang S, Sheng H, Liu Y.
ZnO Schottky ultraviolet photodetectors[J]. J Cryst Growth, 2001, 225: 110.
doi: 10.1016/S0022-0248(01)00830-2
|
[8] |
Pan Z, Tian X, Hu J.
Investigation of optical and electronic properties in Al-Sn co-doped ZnO thin films[J]. Mater Sci Semicond Process, 2013, 16: 587.
doi: 10.1016/j.mssp.2012.06.020
|
[9] |
Qu X, Lu S, Jia D.
First-principles study of the electronic structure of Al and Sn co-doping ZnO system[J]. Mater Sci Semicond Process, 2013, 16: 1057.
doi: 10.1016/j.mssp.2013.04.002
|
[10] |
Tian X, Pan Z, Zhang H.
Growth and characterization of the Al-doped and Al-Sn co-doped ZnO nanostructures[J]. Ceram Int, 2013, 39: 6497.
doi: 10.1016/j.ceramint.2013.01.081
|
[11] |
Huang M C, Wang T H, Cheng S H.
The structure and photoelectrochemistry of Al, Ti co-doped zinc oxide thin films prepared by sol-gel dip-coating process[J]. Nanosci Nanotechnol Lett, 2014, 6: 210.
doi: 10.1166/nnl.2014.1754
|
[12] |
Oleynik N, Adam M, Krtschil A.
MOVPE growth and characterization of ZnO properties for optoelectronic applications[J]. J Cryst Growth, 2003, 248: 14.
doi: 10.1016/S0022-0248(02)01879-1
|
[13] |
Caglar Y, Caglar M, Ilikan S.
Microstructural, optical and electrical studies on sol-gel derived ZnO and ZnO:Al films[J]. Curr Appl Phys, 2012, 12(8): 963.
|
[14] |
Xu Z Q, Deng H, Li Y.
Ultraviolet photoconductive detector based on Al doped ZnO films prepared by sol-gel method[J]. Appl Surf Sci, 2006, 253: 476.
doi: 10.1016/j.apsusc.2005.12.113
|
[15] |
uo S Y, Chen W C, Lai F I..
Effects of doping concentration and annealing temperature on properties of highly-oriented Aldoped ZnO films[J]. J Cryst Growth, 2006, 287(1): 78.
doi: 10.1016/j.jcrysgro.2005.10.047
|
[16] |
Benouis C E, Benhaliliba M, Juareze A S.
The effect of indium doping on structural, electrical conductivity, photoconductivity and density of states properties of ZnO films[J]. Journal of Alloys and Compounds, 2010, 490: 62.
doi: 10.1016/j.jallcom.2009.10.098
|
[17] |
Hsu L S, Yeh C S, Kuo C C.
Optical and transport properties of undoped and Al-, Ga-and In-doped ZnO thin films[J]. J Optoelectron Adv Mater, 2005, 7(6): 3039.
|
[18] |
Caglar Y, Ilican S, Caglar M.
Effects of In, Al and Sn dopants on the structural and optical properties of ZnO thin films[J]. Spectrochim Acta, 2007, 67: 1113.
doi: 10.1016/j.saa.2006.09.035
|
[19] |
Lucio-Lopez M A, Luna-Arias M A, Maldonado A.
Doublelayer indium doped zinc oxide for silicon thin-film solar cell prepared by ultrasonic spray pyrolysis[J]. Solar Energy Mater Solar Cells, 2006, 90: 733.
doi: 10.1016/j.solmat.2005.04.010
|
[20] |
Ratheesh Kumar P M, SudhaKartha C, Vijayakumar K P.
Doping of spray-pyrolyzed ZnO thin films through direct diffusion of indium:structural optical and electrical studies[J]. J Appl Phys, 2012, 98: 023509.
|
[21] |
Xue S W, Zu X T, Zhou W L.
Effects of post-thermal annealing on the optical constants of ZnO thin film[J]. Journal of Alloys and Compounds, 2008, 448: 21.
doi: 10.1016/j.jallcom.2006.10.076
|
[22] |
Ghosh R, Paul G K, Basak D.
Structural and optical characterization of high-quality ZnO[J]. Materials Research Bulletin, 2005, 40: 190.
|
[23] |
Arif A, Belahssen O, Gareh S.
Influence of precursor molarity on the optical properties of ZnO thin films[J]. Journal of Semiconductors, 2015, 36(1): 013001.
doi: 10.1088/1674-4926/36/1/013001
|
[24] |
Mahmood K, Amin N, Ali A.
Enhancement of phosphorssolubility in ZnO by thermal annealing[J]. Journal of Semiconductors, 2015, 36(12): 123001.
doi: 10.1088/1674-4926/36/12/123001
|
[25] |
Ghosh D S, Chena T L, Formica N.
High figure-of-merit Ag/Al:ZnO nano-thick transparent electrodes for indium-free flexible photovoltaics[J]. Solar Energy Materials and Solar Cells, 2012, 107: 338.
doi: 10.1016/j.solmat.2012.07.009
|
[26] |
Zhanchang P, Xinlong T, Guanghui H.
Investigation of optical and electronic properties in Al-Sn co-doped ZnO thin films[J]. Materials Science in Semiconductor Processing, 2013, 587: 592.
|