Direct evidence of traps controlling the carriers transport in SnO<sub>2</sub> nanobelts

Olivia M. Berengue; Adenilson J. Chiquito

doi:10.1088/1674-4926/38/12/122001

J. Semicond. > 2017, Volume 38 > Issue 12 > 122001

SEMICONDUCTOR PHYSICS

Direct evidence of traps controlling the carriers transport in SnO₂ nanobelts

Olivia M. Berengue^1, and Adenilson J. Chiquito²

+ Author Affiliations

Corresponding author: Olivia M. Berengue, Email: oliberengue@gmail.com

DOI: 10.1088/1674-4926/38/12/122001

Abstract: This work reports on direct evidence of localized states in undoped SnO₂ nanobelts. Effects of disorder and electron localization were observed in Schottky barrier dependence on the temperature and in thermally stimulated currents. A transition from thermal activation to hopping transport mechanisms was also observed. The energy levels found by thermally stimulated current experiments were in close agreement with transport data confirming the role of localization in determining the properties of devices.

Key words: trap, transport, SnO₂

References

[1]	Sberveglieri G, Faglia G, Groppelli S, et al.Ultrasensitive and highly selective gas sensors using three-dimensional tungsten oxide nanowire networks. Semicond Sci Technol, 1990, 5(12): 1231 doi: 10.1088/0268-1242/5/12/015
[2]	Göpel W. Ultimate limits in the miniaturization of chemical sensors. Sens Actuators A, 1996, 56(1/2):83
[3]	Henrich V E, Cox P A. The surface science of metal oxides. Cambridge University Press, 1994
[4]	Barsan N, Schweizer-Berberich M, Gopel W. Fundamental and practical aspects in the design of nanoscaled SnO₂ gas sensors: a status report. Fresenius J Anal, 1999, 365(4): 287 doi: 10.1007/s002160051490
[5]	Kolmakov A, Klenov D O, Lilach Y, et al. Enhanced gas sensing by individual SnO₂ nanowires and nanobelts functionalized with Pd catalyst particles. Nano Lett, 2005, 5(4): 667 doi: 10.1021/nl050082v
[6]	Dai Z R, Gole J R, Stout J D, et al. Tin oxide nanowires, nanoribbons, and nanotubes. J Phys Chem B, 2002, 106(6): 1274 doi: 10.1021/jp013214r
[7]	Grace Lu J, Chang P, Fan Z. Quasi-one-dimensional metal oxide materials-synthesis, properties and applications. Mater Sci Eng R, 2006, 52(1-3): 49
[8]	Lanfredi A J C, Geraldes R R, Berengue O M, et al. Electron transport properties of undoped SnO₂ monocrystals. J Appl Phys, 2009, 105(2): 023708 doi: 10.1063/1.3068185
[9]	Berengue O M, Kanashiro M K, Chiquito A J, et al. Detection of oxygen vacancy defect states in oxide nanobelts by using thermally stimulated current spectroscopy. Semicond Sci Technol, 2012, 27(6): 065021 doi: 10.1088/0268-1242/27/6/065021
[10]	Berengue O M, Simon R A, Chiquito A J, et al. Semiconducting Sn₃O₄ nanobelts: growth and electronic structure. J Appl Phys, 2010, 107(3): 0337171
[11]	Korber C, Harvey S P, Mason T O, et al. Barrier heights at the SnO₂/Pt interface: in situ photoemission and electrical properties. Surf Sci, 2008, 602(21): 3246 doi: 10.1016/j.susc.2008.08.015
[12]	Wager J F. Transparent electronics: Schottky barrier and heterojunction considerations. Thin Solid Films, 2008, 516(8): 1755 doi: 10.1016/j.tsf.2007.06.164
[13]	Werner J H, Guttler H H. Barrier inhomogeneities at Schottky contacts. J Appl Phys, 1991, 69(3): 1522 doi: 10.1063/1.347243
[14]	Lai M, Lim J H, Mibeen S,et al. Size-controlled electrochemical synthesis and properties of SnO₂ nanotubes. Nanotechnology, 2009, 20(18): 185602 doi: 10.1088/0957-4484/20/18/185602
[15]	Mott N F. Metal–insulator transitions. Taylor and Francis, 1990
[16]	Wrobel J M, Gubanski A, Placzek-Popko E,et al. Thermally stimulated current in high resistivity Cd_0.85Mn_0.15Te doped with indium. J Appl Phys, 2008, 103(6): 063720 doi: 10.1063/1.2894576
[17]	Wright H C, Allen G A. Thermally stimulated current analysis. J Appl Phys, 1966, 17(9): 1181

Fig. 1. (Color online) (a) XRD data for three different as-grown samples showing the rutile-like peaks (PDF 41-1445) expected for the tetragonal SnO₂ structure. Panel (b) shows an SEM image of the as-synthesized nanostructures. We found belts with lateral sizes ranging from 50 to 400 nm and lengths of tens of micrometers and also wires with sizes ranging from 30 to 300 nm and lengths of tens of micrometers. Also, in the inset there is a large magnification image showing the cross-section of the nanobelts in detail.

DownLoad: Full-Size Img PowerPoint

Fig. 2. (Color online) Current-voltage curves for a single nanobelt device at different temperatures. Although the metal used for the two contacts is the same, the electrical characteristics are clearly distinct (asymmetry). Using the back-to-back model in order to fit these current-voltage curves, we found Schottky barriers at both interfaces as depicted in panel (b).

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online) Resistivity of SnO₂ devices decreased as the temperature increased as should be expected for semiconductors, panel (a). Panels (b) and (c) show regions where variable range-hopping mechanism and Arrhenius-type mechanisms were found, respectively.

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online) Thermally stimulated current measured in a single nanobelt device showing two different levels at 100 and 190 K. The energies for these levels were found to be 16 and 51 meV.

DownLoad: Full-Size Img PowerPoint

[1]	Sberveglieri G, Faglia G, Groppelli S, et al.Ultrasensitive and highly selective gas sensors using three-dimensional tungsten oxide nanowire networks. Semicond Sci Technol, 1990, 5(12): 1231 doi: 10.1088/0268-1242/5/12/015
[2]	Göpel W. Ultimate limits in the miniaturization of chemical sensors. Sens Actuators A, 1996, 56(1/2):83
[3]	Henrich V E, Cox P A. The surface science of metal oxides. Cambridge University Press, 1994
[4]	Barsan N, Schweizer-Berberich M, Gopel W. Fundamental and practical aspects in the design of nanoscaled SnO₂ gas sensors: a status report. Fresenius J Anal, 1999, 365(4): 287 doi: 10.1007/s002160051490
[5]	Kolmakov A, Klenov D O, Lilach Y, et al. Enhanced gas sensing by individual SnO₂ nanowires and nanobelts functionalized with Pd catalyst particles. Nano Lett, 2005, 5(4): 667 doi: 10.1021/nl050082v
[6]	Dai Z R, Gole J R, Stout J D, et al. Tin oxide nanowires, nanoribbons, and nanotubes. J Phys Chem B, 2002, 106(6): 1274 doi: 10.1021/jp013214r
[7]	Grace Lu J, Chang P, Fan Z. Quasi-one-dimensional metal oxide materials-synthesis, properties and applications. Mater Sci Eng R, 2006, 52(1-3): 49
[8]	Lanfredi A J C, Geraldes R R, Berengue O M, et al. Electron transport properties of undoped SnO₂ monocrystals. J Appl Phys, 2009, 105(2): 023708 doi: 10.1063/1.3068185
[9]	Berengue O M, Kanashiro M K, Chiquito A J, et al. Detection of oxygen vacancy defect states in oxide nanobelts by using thermally stimulated current spectroscopy. Semicond Sci Technol, 2012, 27(6): 065021 doi: 10.1088/0268-1242/27/6/065021
[10]	Berengue O M, Simon R A, Chiquito A J, et al. Semiconducting Sn₃O₄ nanobelts: growth and electronic structure. J Appl Phys, 2010, 107(3): 0337171
[11]	Korber C, Harvey S P, Mason T O, et al. Barrier heights at the SnO₂/Pt interface: in situ photoemission and electrical properties. Surf Sci, 2008, 602(21): 3246 doi: 10.1016/j.susc.2008.08.015
[12]	Wager J F. Transparent electronics: Schottky barrier and heterojunction considerations. Thin Solid Films, 2008, 516(8): 1755 doi: 10.1016/j.tsf.2007.06.164
[13]	Werner J H, Guttler H H. Barrier inhomogeneities at Schottky contacts. J Appl Phys, 1991, 69(3): 1522 doi: 10.1063/1.347243
[14]	Lai M, Lim J H, Mibeen S,et al. Size-controlled electrochemical synthesis and properties of SnO₂ nanotubes. Nanotechnology, 2009, 20(18): 185602 doi: 10.1088/0957-4484/20/18/185602
[15]	Mott N F. Metal–insulator transitions. Taylor and Francis, 1990
[16]	Wrobel J M, Gubanski A, Placzek-Popko E,et al. Thermally stimulated current in high resistivity Cd_0.85Mn_0.15Te doped with indium. J Appl Phys, 2008, 103(6): 063720 doi: 10.1063/1.2894576
[17]	Wright H C, Allen G A. Thermally stimulated current analysis. J Appl Phys, 1966, 17(9): 1181

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Received: 02 January 2017 Revised: 16 June 2017 Online: Corrected proof: 15 November 2017Published: 01 December 2017

This work reports on direct evidence of localized states in undoped SnO₂ nanobelts. Effects of disorder and electron localization were observed in Schottky barrier dependence on the temperature and in thermally stimulated currents. A transition from thermal activation to hopping transport mechanisms was also observed. The energy levels found by thermally stimulated current experiments were in close agreement with transport data confirming the role of localization in determining the properties of devices.

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Direct evidence of traps controlling the carriers transport in SnO₂ nanobelts

Direct evidence of traps controlling the carriers transport in SnO₂ nanobelts