J. Semicond. > Volume 39 > Issue 10 > Article Number: 104008

Reliability testing of a 3D encapsulated VHF MEMS resonator

Fengxiang Wang 1, 2, 3, , Quan Yuan 1, 2, , Xiao Kan 1, 2, 3, , Jicong Zhao 4, , Zeji Chen 1, 2, 3, , Jinling Yang 1, 2, 3, , and Fuhua Yang 1, 2,

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Abstract: The frequency stability of a three-dimensional (3D) vacuum encapsulated very high frequency (VHF) disk resonator is systematically investigated. For eliminating the parasitic effect caused by the parasitic capacitance of the printed circuit board (PCB), a negating capacitive compensation method was developed. The testing results implemented at 25 °C for 240 h for the long-term stability indicates that the resonant frequency variation remained within ±1 ppm and the noise floor derived from Allan Deviation was 26 ppb, which is competitive with the conventional quartz resonators. The resonant frequency fluctuation of 1.5 ppm was obtained during 200 temperature cycling between −40 and 85 °C.

Key words: 3D encapsulationVHF disk resonatorfrequency stabilityparasitic effect

Abstract: The frequency stability of a three-dimensional (3D) vacuum encapsulated very high frequency (VHF) disk resonator is systematically investigated. For eliminating the parasitic effect caused by the parasitic capacitance of the printed circuit board (PCB), a negating capacitive compensation method was developed. The testing results implemented at 25 °C for 240 h for the long-term stability indicates that the resonant frequency variation remained within ±1 ppm and the noise floor derived from Allan Deviation was 26 ppb, which is competitive with the conventional quartz resonators. The resonant frequency fluctuation of 1.5 ppm was obtained during 200 temperature cycling between −40 and 85 °C.

Key words: 3D encapsulationVHF disk resonatorfrequency stabilityparasitic effect



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[1]

Vig J, Ballato A. Ultrasonic instruments and devices. New York: Academic, 1999

[2]

Rocheleau T O, Naing T L, Nguyen T C. Long-term stability of a hermetically packaged MEMS disk oscillator. IEEE European Frequency and Time Forum & International Frequency Control Symposium, 2014: 209

[3]

Kim B, Candler R N, Hopcroft M A, et al. Frequency stability of wafer-scale film encapsulated silicon based MEMS resonators. Sens Actuators A, 2007, 136(1): 125

[4]

Koskenvuori M, Mattila T, Häärä A, et al. Long-term stability of single-crystal silicon microresonators. Sens Actuators A, 2004, 115(1): 23

[5]

Tabrizian R, Casinovi G, Ayazi F. Temperature-stable silicon oxide (SilOx) micromechanical resonators. IEEE Trans Electron Devices, 2013, 60(8): 2656

[6]

Kaajakari V, Kiihamäki J, Oja A, et al. Stability of wafer level vacuum encapsulated single-crystal silicon resonators. Sens Actuators A, 2006, 130/131(2): 42

[7]

Jin X, Y F Liu, H Zhao, et al. Reliable low-cost fabrication and characterization methods for micromechanical disk resonators. 16th International Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011: 2462

[8]

Yuan Q, Luo W, Zhao H, et al. Frequency stability of RF-MEMS disk resonators. IEEE Trans Electron Devices, 2015, 62(5): 1603

[9]

Zhao J C, Yuan Q, Wang F X, et al. Design and characterization of a 3D encapsulation with silicon vias for radio frequency micro-electromechanical system resonator. Chin Phys B, 2017, 26(6): 119

[10]

Zhao J C, Yuan Q, Kan X, et al. A low feed-through 3D vacuum packaging technique with silicon vias for RF MEMS resonators. J Micromechan Microeng, 2016, 27(1): 014003

[11]

Vig J R, Meeker T R. The aging of bulk acoustic wave resonators, filters and oscillators. Proceedings of the Symposium on Frequency Control, 1991: 77

[12]

Antonio D, Zanette D H, López D. Frequency stabilization in nonlinear micromechanical oscillators. Nat Commun, 2012, 3(3): 806

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F X Wang, Q Yuan, X Kan, J C Zhao, Z J Chen, J L Yang, F H Yang, Reliability testing of a 3D encapsulated VHF MEMS resonator[J]. J. Semicond., 2018, 39(10): 104008. doi: 10.1088/1674-4926/39/10/104008.

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History

Manuscript received: 03 February 2018 Manuscript revised: 19 March 2018 Online: Uncorrected proof: 03 May 2018 Accepted Manuscript: 05 July 2018 Published: 09 October 2018

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