J. Semicond. > Volume 39 > Issue 12 > Article Number: 125007

Design of a 3D Wilkinson power divider using through glass via technology

Jifei Sang , Libo Qian , , Yinshui Xia and Huakang Xia

+ Author Affiliations + Find other works by these authors

PDF

Turn off MathJax

Abstract: Due to its low electrical loss and low process cost, a glass interposer has been developed to provide a compelling alternative to the silicon-based interposer for packaging of future 2-D and 3-D ICs. In this study, through glass vias (TGVs) are used to implement 3-D inductors for minimal footprint and large quality factor. Using the inductors and parallel plate capacitors, a compact 3-D Wilkinson power divider is designed and analyzed. Compared with some reported power dividers, the proposed TGV-based circuit has an ultra-compact size and excellent electrical performance.

Key words: 3D integrationglass interposerthrough glass viaspower divider

Abstract: Due to its low electrical loss and low process cost, a glass interposer has been developed to provide a compelling alternative to the silicon-based interposer for packaging of future 2-D and 3-D ICs. In this study, through glass vias (TGVs) are used to implement 3-D inductors for minimal footprint and large quality factor. Using the inductors and parallel plate capacitors, a compact 3-D Wilkinson power divider is designed and analyzed. Compared with some reported power dividers, the proposed TGV-based circuit has an ultra-compact size and excellent electrical performance.

Key words: 3D integrationglass interposerthrough glass viaspower divider



References:

[1]

Zhang R, Jeffery C C, Lee W R. Design and fabrication of a silicon interposer with TSVs in cavities for three dimensional IC packaging. IEEE Trans Device Mater Reliab, 2012, 12(2): 189

[2]

Yin X, Zhu Z, Yang Y, et al. Effectiveness of p+ layer in mitigating substrate noise induced by through silicon via for microwave applications. IEEE Microwave Wireless Compon Lett, 2016, 26(9): 687

[3]

Wang F, Zhu Z, Yang Y, et al. An effective approach of reducing the keep out zone induced by coaxial through silicon via. IEEE Trans Electron Devices, 2014, 61(8): 2928

[4]

Lu J Q. 3-D hyper integration and packaging technologies for mico-nanosystems. Proc IEEE, 2009, 97(1): 18

[5]

Lee S, Chen K. Development of bump less stacking with bottom-up TSV fabrication. IEEE Trans Electron Devices, 2017, 64(4): 1660

[6]

Sukumaran V, Bandyopadhyay T, Sundaram V, et al. Low cost thin glass interposers as a superior alternative to silicon and organic interposers for packaging of 3D ICs. IEEE Trans Compon, Pack Manuf Technol, 2012, 2(9): 1426

[7]

Sukumaran V, Kumar G, Ramachandran K, et al. Design, fabrication and characterization of ultrathin 3-D glass interposers with through package vias at same pitch as TSVs in silicon. IEEE Trans Compon, Pack Manuf Technol, 2014, 4(5): 786

[8]

Li J, Wei X C, Li E P. Accurate field circuit hybrid modeling of high density through glass via arrays using perfect magnetic conductors and cylindrical mode expansion. IEEE Trans Compon, Pack Manuf Technol, 2016, 6(1): 100

[9]

Cho S, Sundaram V, Tummala R R, et al. Impact of copper through package vias on thermal performance of glass interposers. IEEE Trans Compon, Pack Manuf Technol, 2015, 5(8): 1075

[10]

Hsieh Y C, Chang Y S, Lee T C, et al. Characterization of through glass via (TGV) RF inductors. International Microsystems, Packaging, Assembly and Circuits Technology Conference, 2016: 87

[11]

Kim J, Shenoy R, Lai K Y, et al. High-Q 3D RF solenoid inductors in glass. IEEE Radio Frequency Integrated Circuits Symposium, 2014: 199

[12]

Liu M, Wei X, Wang P, et al. Compact LTCC multilayer broadband power divider. International Conference on Computational Problem-Solving, 2011: 370

[13]

D M Pozar. Microwave engineering. 3rd ed. CA: John Wiley & Sons, 2005: 274

[14]

Yu T. A broadband Wilkinson power divider based on the segmented structure. IEEE Trans Microwave Theory Tech, 2018, 66(4): 1902

[15]

Wang X, Takahashi K, Okamura S, et al. Generalized port separation dual-band Wilkinson power divider with series RLC components. Microwave Conference, 2011: 289

[16]

Manual of Advanced Design System v2016.01[Online]. Available: https://www.keysight.com/cn/zh/products/design-software.html

[17]

Krishnamurthy H K, Weng S, Mathew G E, et al. A 500 MHz, 68% efficient, fully on-die digitally controlled buck voltage regulator on 22 nm Tri-gate CMOS. VLSI Dig Tech Papers, 2014: 1

[18]

Manual of HFSS v15[Online]. Available: http://www.aonesoft.net/ansys/hfss.html

[19]

Yu T, Tsai J. Design of multi way power dividers including all connecting lines. IET Microwave, Antenna & Propagation, 2018, 12(8): 1367

[20]

Shao J, Huang S, Pang Y. Wilkinson power divider incorporating quasi-elliptic filters for improved out of band rejection. Electron Lett, 2011, 47(23): 1288

[21]

Wu D, Li Y, Xue Q. Filtering power divider with harmonic suppression based on LTCC broadside coupling. Electron Lett, 2018, 54(11): 697

[22]

Zhou B. Broadband and compact LTCC power divider. Electron Lett, 2015, 51(23): 1939

[1]

Zhang R, Jeffery C C, Lee W R. Design and fabrication of a silicon interposer with TSVs in cavities for three dimensional IC packaging. IEEE Trans Device Mater Reliab, 2012, 12(2): 189

[2]

Yin X, Zhu Z, Yang Y, et al. Effectiveness of p+ layer in mitigating substrate noise induced by through silicon via for microwave applications. IEEE Microwave Wireless Compon Lett, 2016, 26(9): 687

[3]

Wang F, Zhu Z, Yang Y, et al. An effective approach of reducing the keep out zone induced by coaxial through silicon via. IEEE Trans Electron Devices, 2014, 61(8): 2928

[4]

Lu J Q. 3-D hyper integration and packaging technologies for mico-nanosystems. Proc IEEE, 2009, 97(1): 18

[5]

Lee S, Chen K. Development of bump less stacking with bottom-up TSV fabrication. IEEE Trans Electron Devices, 2017, 64(4): 1660

[6]

Sukumaran V, Bandyopadhyay T, Sundaram V, et al. Low cost thin glass interposers as a superior alternative to silicon and organic interposers for packaging of 3D ICs. IEEE Trans Compon, Pack Manuf Technol, 2012, 2(9): 1426

[7]

Sukumaran V, Kumar G, Ramachandran K, et al. Design, fabrication and characterization of ultrathin 3-D glass interposers with through package vias at same pitch as TSVs in silicon. IEEE Trans Compon, Pack Manuf Technol, 2014, 4(5): 786

[8]

Li J, Wei X C, Li E P. Accurate field circuit hybrid modeling of high density through glass via arrays using perfect magnetic conductors and cylindrical mode expansion. IEEE Trans Compon, Pack Manuf Technol, 2016, 6(1): 100

[9]

Cho S, Sundaram V, Tummala R R, et al. Impact of copper through package vias on thermal performance of glass interposers. IEEE Trans Compon, Pack Manuf Technol, 2015, 5(8): 1075

[10]

Hsieh Y C, Chang Y S, Lee T C, et al. Characterization of through glass via (TGV) RF inductors. International Microsystems, Packaging, Assembly and Circuits Technology Conference, 2016: 87

[11]

Kim J, Shenoy R, Lai K Y, et al. High-Q 3D RF solenoid inductors in glass. IEEE Radio Frequency Integrated Circuits Symposium, 2014: 199

[12]

Liu M, Wei X, Wang P, et al. Compact LTCC multilayer broadband power divider. International Conference on Computational Problem-Solving, 2011: 370

[13]

D M Pozar. Microwave engineering. 3rd ed. CA: John Wiley & Sons, 2005: 274

[14]

Yu T. A broadband Wilkinson power divider based on the segmented structure. IEEE Trans Microwave Theory Tech, 2018, 66(4): 1902

[15]

Wang X, Takahashi K, Okamura S, et al. Generalized port separation dual-band Wilkinson power divider with series RLC components. Microwave Conference, 2011: 289

[16]

Manual of Advanced Design System v2016.01[Online]. Available: https://www.keysight.com/cn/zh/products/design-software.html

[17]

Krishnamurthy H K, Weng S, Mathew G E, et al. A 500 MHz, 68% efficient, fully on-die digitally controlled buck voltage regulator on 22 nm Tri-gate CMOS. VLSI Dig Tech Papers, 2014: 1

[18]

Manual of HFSS v15[Online]. Available: http://www.aonesoft.net/ansys/hfss.html

[19]

Yu T, Tsai J. Design of multi way power dividers including all connecting lines. IET Microwave, Antenna & Propagation, 2018, 12(8): 1367

[20]

Shao J, Huang S, Pang Y. Wilkinson power divider incorporating quasi-elliptic filters for improved out of band rejection. Electron Lett, 2011, 47(23): 1288

[21]

Wu D, Li Y, Xue Q. Filtering power divider with harmonic suppression based on LTCC broadside coupling. Electron Lett, 2018, 54(11): 697

[22]

Zhou B. Broadband and compact LTCC power divider. Electron Lett, 2015, 51(23): 1939

[1]

Zebao Du, Hao Yang, Haiying Zhang, Min Zhu. An integrated power divider implemented in GaAs technology. J. Semicond., 2014, 35(4): 045003. doi: 10.1088/1674-4926/35/4/045003

[2]

Liming Gu, Wenquan Che, Fan-Hsiu Huang, Hsien-Chin Chiu. A high power active circulator using GaN MMIC power amplifiers. J. Semicond., 2014, 35(11): 115003. doi: 10.1088/1674-4926/35/11/115003

[3]

Xiaoxian Liu, Zhangming Zhu, Yintang Yang, Fengjuan Wang, Ruixue Ding. Impedance matching for the reduction of signal reflection in high speed multilevel three-dimensional integrated chips. J. Semicond., 2014, 35(1): 015008. doi: 10.1088/1674-4926/35/1/015008

[4]

Yingbo Zhao, Gang Dong, Yintang Yang. Analysis and optimization of TSV-TSV coupling in three-dimensional integrated circuits. J. Semicond., 2015, 36(4): 045011. doi: 10.1088/1674-4926/36/4/045011

[5]

Amit Chaudhry. Interconnects for nanoscale MOSFET technology:a review. J. Semicond., 2013, 34(6): 066001. doi: 10.1088/1674-4926/34/6/066001

[6]

Qiang Yao, Zuochang Ye, Wenjian Yu. An efficient method for comprehensive modeling and parasitic extraction of cylindrical through-silicon vias in 3D ICs. J. Semicond., 2015, 36(8): 085006. doi: 10.1088/1674-4926/36/8/085006

[7]

Runiu Fang, Xin Sun, Min Miao, Yufeng Jin. Novel through-silicon vias for enhanced signal integrity in 3D integrated systems. J. Semicond., 2016, 37(10): 106002. doi: 10.1088/1674-4926/37/10/106002

[8]

Zhang Dan, Liu Ke, Zhang Daming, Cheng Chuanhui, Zhang Xizhen, Zhang Haiming, Pan Yubin. Phosphate Glass Waveguide Amplifiers. J. Semicond., 2006, 27(10): 1857.

[9]

Zhang Jun, Liao Xiaoping, Jiao Yongchang. Microwave frequency detector at X-band using GaAs MMIC technology. J. Semicond., 2009, 30(4): 044009. doi: 10.1088/1674-4926/30/4/044009

[10]

Zhang Zefang, Liu Weili, Song Zhitang. Effect of ammonium molybdate concentration on chemical mechanical polishing of glass substrate. J. Semicond., 2010, 31(11): 116003. doi: 10.1088/1674-4926/31/11/116003

[11]

Peng Li, Zhao Wenbin, Wang Guozhang, Yu Zongguang. Development of spin-on-glass process for triple metal interconnects. J. Semicond., 2010, 31(12): 126003. doi: 10.1088/1674-4926/31/12/126003

[12]

Tian Qiang, Liu Huimin, Fan Jieping, Yang Yonggang. Electric Dipole Moment of Graded Spherical Semiconductor Quantum Dots Embedded in Glass. J. Semicond., 2005, 26(12): 2374.

[13]

Liu Yufei, Liu Wenping, Li Sihua, Wu Yaming, Luo Le. Si-Glass Hermetic Package with the Benzo-Cyclo-Butene Material. J. Semicond., 2006, 27(S1): 407.

[14]

Ma Ziwen, Tang Zirong, Liao Guanglan, Shi Tielin, Nie Lei. Pressure-Free Localized Laser Bonding for Silicon and Glass. J. Semicond., 2007, 28(2): 217.

[15]

Cheng Wenjin, Tang Zirong, Liao Guanglan, Shi Tielin, Lin Xiaohui, Peng Ping. Intermediate Layer Bonding for Silicon and Glass Based on UV Adhesive. J. Semicond., 2008, 29(1): 179.

[16]

Xiaoli Ren, Cheng Pang, Zheng Qin, Ye Ping, Feng Jiang, Kai Xue, Haiyan Liu, Daquan Yu. Design, analysis and test of high-frequency interconnections in 2.5D package with silicon interposer. J. Semicond., 2016, 37(4): 045003. doi: 10.1088/1674-4926/37/4/045003

[17]

Jun Li, Xingchang Wei, Yufei Shu. Equivalent radiation source of 3D package for electromagnetic characteristics analysis. J. Semicond., 2017, 38(10): 105010. doi: 10.1088/1674-4926/38/10/105010

[18]

Hu Xiuzhen, Li Zhiguo, Guo Chunsheng, Wu Yuehua, Liao Jingning. FEA Method in the 3D Thermal Simulation of MCM. J. Semicond., 2006, 27(S1): 351.

[19]

Fengxiang Wang, Quan Yuan, Xiao Kan, Jicong Zhao, Zeji Chen, Jinling Yang, Fuhua Yang. Reliability testing of a 3D encapsulated VHF MEMS resonator. J. Semicond., 2018, 39(10): 104008. doi: 10.1088/1674-4926/39/10/104008

[20]

Libo Qian, Zhangming Zhu, Ruixue Ding, Yintang Yang. Circuit modeling and performance analysis of SWCNT bundle 3D interconnects. J. Semicond., 2013, 34(9): 095014. doi: 10.1088/1674-4926/34/9/095014

Search

Advanced Search >>

GET CITATION

J F Sang, L B Qian, Y S Xia, H K Xia, Design of a 3D Wilkinson power divider using through glass via technology[J]. J. Semicond., 2018, 39(12): 125007. doi: 10.1088/1674-4926/39/12/125007.

Export: BibTex EndNote

Article Metrics

Article views: 1065 Times PDF downloads: 34 Times Cited by: 0 Times

History

Manuscript received: 15 June 2018 Manuscript revised: 15 July 2018 Online: Uncorrected proof: 11 October 2018 Published: 13 December 2018

Email This Article

User name:
Email:*请输入正确邮箱
Code:*验证码错误