Chin. J. Semicond. > Volume 13 > Issue 6 > Article Number: 343

应变层In_xGa_(1-x)As/GaAs量子阱的光调制反射谱研究

潘士宏 , 刘毅 , 张存洲 , 张光寅 , 冯巍 and 周钧铭

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Abstract: 用光调制反射谱(PR)测量了三块应变层 In_xGa_(1-x)As/GaAs 量子阱多重结构样品,每块样品中包含宽度为140、80、50、30和20A的量子阱.在300K和77K的PR谱中观察到各个量子阱的11H和11L光跃迁.根据PR数据用包络函数法进行分析,估算了量子阱中In的成分.在解释300K和77K实验结果时考虑了流体静压形变势常数的温度依赖性.实验和理论最佳符合时求得导带边不连续性在300K为0.7,77K为0.66.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 June 1992

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