Chin. J. Semicond. > Volume 13 > Issue 6 > Article Number: 351

(GaAs)_(1-x)Ge_(2x)半导体合金材料的电子结构及其基态性质

段文晖 , 顾秉林 and 朱嘉麟

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Abstract: 本文根据闪锌矿-金刚石结构的有序-无序相变模型,引入序参量M,在改进的虚晶格近似下,利用从第一性原理出发的自治LMTO-ASA方法,研究了(GaAs)_(1-x)Ge_(2x)半导体合金的电子结构和基态性质.计算结果与现有的非自治计算结果和实验结果进行了比较.计算表明,合金材料中轻、重空穴有效质量依赖于合金的有序度.计算也表明合金材料的晶格常数和体弹性模量将随组份x变化而呈现类似“V”形变化.这都说明,在有序和无序的组份区域,合金性质随组份的变化规律是不同的,应分区描述.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 June 1992

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