Chin. J. Semicond. > 1992, Volume 13 > Issue 6 > 351-358
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(GaAs)_(1-x)Ge_(2x)半导体合金材料的电子结构及其基态性质

段文晖 , 顾秉林 and 朱嘉麟

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    Received: 19 August 2015 Revised: Online: Published: 01 June 1992

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      Article Navigation >  Journal of Semiconductors  > 1992  >  13(6): 351-358
      段文晖, 顾秉林, 朱嘉麟. (GaAs)_(1-x)Ge_(2x)半导体合金材料的电子结构及其基态性质[J]. 半导体学报(英文版), 1992, 13(6): 351-358.
      Citation:
      段文晖, 顾秉林, 朱嘉麟. (GaAs)_(1-x)Ge_(2x)半导体合金材料的电子结构及其基态性质[J]. 半导体学报(英文版), 1992, 13(6): 351-358.
      shu

      • Received Date: 2015-08-19

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