Chin. J. Semicond. > Volume 18 > Issue 6 > Article Number: 454

硅双极晶体管的低温h_(FE)

林兆军 and 薄仕群

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Abstract: 低温下hFE主要决定于发射效率γ和集电区倍增因子M.影响γ的是禁带收缩和基区费米能级.M则主要由中性杂质被碰撞电离而造成的电流倍增效应决定,并且这是一种自抑制效应,以上观点与实验结果基本相符合。

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 June 1997

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