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Chin. J. Semicond. > Volume 1 > Issue 1 > Article Number: 43

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GaAs-AlGaAs双异质结(DH)外延片的位错检测

彭怀德

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Abstract: 我们用熔融KOH作位错腐蚀剂,并用位错跟踪腐蚀的方法显示DH外延片的位错,结果表明,可以依照 DH外延片顶层(P~+-GaAs层)的位错腐蚀坑形状,区分出从 n-GaAs延伸上来的位错和由异质结外延引进的位错.

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History

Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 January 1980

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