Chin. J. Semicond. > Volume 19 > Issue 11 > Article Number: 806

CdTe/ZnTe应变量子阱中的浅施主结合能

刘魁勇 and 邢金海

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Abstract: 本文研究了介电常数失配对CdTe/ZnTe应变量子阱中浅施主杂质结合能的影响.在有效质量近似下,利用变分方法计算了阱宽、杂质位置及应变对结合能的影响,得到了介电失配使结合能减小的结论

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History

Manuscript received: 18 August 2015 Manuscript revised: Online: Published: 01 November 1998

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