Chin. J. Semicond. > 1997, Volume 18 > Issue 11 > 836-839
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刻蚀腔InGaAsP/InP双异质结激光器的制作与特性

颜学进 , 张权生 , 石志文 , 杜云 , 祝亚芹 , 罗丽萍 , 朱家廉 , 吴荣汉 and 王启明

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    Received: 19 August 2015 Revised: Online: Published: 01 November 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(11): 836-839
      颜学进, 张权生, 石志文, 杜云, 祝亚芹, 罗丽萍, 朱家廉, 吴荣汉, 王启明. 刻蚀腔InGaAsP/InP双异质结激光器的制作与特性[J]. 半导体学报(英文版), 1997, 18(11): 836-839.
      Citation:
      颜学进, 张权生, 石志文, 杜云, 祝亚芹, 罗丽萍, 朱家廉, 吴荣汉, 王启明. 刻蚀腔InGaAsP/InP双异质结激光器的制作与特性[J]. 半导体学报(英文版), 1997, 18(11): 836-839.
      shu

      • Received Date: 2015-08-19

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