SEMICONDUCTOR TECHNOLOGY

Effect of polishing parameters on abrasive free chemical mechanical planarization of semi-polar(11$\bar{2}$2) aluminum nitride surface

Khushnuma Asghar and D. Das

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 Corresponding author: D. Das, Email: ddse@uohyd.ernet.in

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Abstract: An abrasive free chemical mechanical planarization(AFCMP) of semi-polar(11$\bar{2}$2) AlN surface has been demonstrated. The effect of slurry pH, polishing pressure, and platen velocity on the material removal rate(MRR) and surface quality(RMS roughness) have been studied. The effect of polishing pressure on the AFCMP of the(11$\bar{2}$2) AlN surface has been compared with that of the(11$\bar{2}$2) AlGaN surface. The maximum MRR has been found to be ~562 nm/h for the semi-polar(11$\bar{2}$2) AlN surface, under the experimental conditions of 38 kPa pressure, 90 rpm platen velocity, 30 rpm carrier velocity, slurry pH 3 and 0.4 M oxidizer concentration. The best root mean square(RMS) surface roughness of ~1.2 nm and ~0.7 nm, over a large scanning area of 0.70×0.96 mm2, has been achieved on AFCMP processed semi-polar(11$\bar{2}$2) AlN and(AlGaN) surfaces using optimized slurry chemistry and processing parameters.

Key words: AlNAFCMPchemical mechanical planarizationmaterial removal ratesurface roughness



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Fig1.  Effect of slurry pH on MRR of semi polar (11$\overline{2}$2) AlN.

Fig2.  Effect of slurry pH on roughness of (11$\overline{2}$2) AlN surfaces.

Fig3.  (Color online) (a,b,c,d) 2D and (a$'$,b$'$,c$'$,d$'$) 3D optical surface profiler images of (a,a$'$) as-grown semi polar (11$\overline{2}$2) AlN surface and AFCMP processed surfaces with slurry pHs of (b,b$'$) 1,(c,c$'$) 2 and (d,d$'$) 3.

Fig4.  Effect of Platen velocity on material removal rate (MRR) of semi polar (11$\overline{2}$2) AlN surface.

Fig5.  (Color online) (a) 2D and (b) 3D optical surface profiler (OSP) images of semi-polar (11$\overline{2}$2) AlN surface processed AFCMP at a platen velocity of 100 rpm respectively under experimental conditions of a carrier velocity of 30 rpm,downward pressure of 38 kPa,slurry pH of 2 and 0.4 M KMnO$_{4}$ solution. The RMS surface roughness is found to be $\sim $1.2 nm over a scan area of 0.70 × 0.96 mm$^{2}$ after KMnO$_{4}$ AFCMP.

Fig6.  Effect of polishing pressure on the MRR of (a) semi polar (11$\overline{2}$2) AlN and (b) semi polar (11$\overline{2}$2) AlGaN surfaces.

Fig7.  Comparisons of MRR of semipolar AlGaN,AlN and GaN surfaces using AFCMP. The data for (11$\overline{2}$2) GaN surface has been taken from Reference [20].

Fig8.  (Color online) Optical surface profiler images of as-grown semi polar (11$\overline{2}$2) AlGaN surfaces. (a) 2D view. (a') 3D view.

Fig9.  (a,b,c,d) 2D and (a$'$,b$'$,c$'$,d$'$) 3D optical surface profiler images of semi-polar (11$\overline{2}$2) AlGaN surface processed by AFCMP process at downward pressures of (a,a$'$) 31 kPa,(b,b$'$) 38 kPa,(c,c$'$) 52 kPa,and (d,d$'$) 62 kPa.

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    Received: 07 January 2014 Revised: Online: Published: 01 March 2016

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      Khushnuma Asghar, D. Das. Effect of polishing parameters on abrasive free chemical mechanical planarization of semi-polar(11$\bar{2}$2) aluminum nitride surface[J]. Journal of Semiconductors, 2016, 37(3): 036001. doi: 10.1088/1674-4926/37/3/036001 K Asghar, D. Das. Effect of polishing parameters on abrasive free chemical mechanical planarization of semi-polar(11$\bar{2}$2) aluminum nitride surface[J]. J. Semicond., 2016, 37(3): 036001. doi: 10.1088/1674-4926/37/3/036001.Export: BibTex EndNote
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      Khushnuma Asghar, D. Das. Effect of polishing parameters on abrasive free chemical mechanical planarization of semi-polar(11$\bar{2}$2) aluminum nitride surface[J]. Journal of Semiconductors, 2016, 37(3): 036001. doi: 10.1088/1674-4926/37/3/036001

      K Asghar, D. Das. Effect of polishing parameters on abrasive free chemical mechanical planarization of semi-polar(11$\bar{2}$2) aluminum nitride surface[J]. J. Semicond., 2016, 37(3): 036001. doi: 10.1088/1674-4926/37/3/036001.
      Export: BibTex EndNote

      Effect of polishing parameters on abrasive free chemical mechanical planarization of semi-polar(11$\bar{2}$2) aluminum nitride surface

      doi: 10.1088/1674-4926/37/3/036001
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      • Corresponding author: D. Das, Email: ddse@uohyd.ernet.in
      • Received Date: 2014-01-07
      • Accepted Date: 2014-07-07
      • Published Date: 2016-01-25

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