Chin. J. Semicond. > Volume 18 > Issue 5 > Article Number: 367

在液氮温度下具有高增益的SiGe/SiHBT

邹德恕 , 陈建新 , 沈光地 , 高国 , 杜金玉 , 张时明 , 袁颖 , 王东凤 , 邓军 , W.X.Ni and G.V.Hansson

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Abstract: 本文分析了硅双极晶体管电流增益在低温下减小的原因.通过优化设计,研制出在液氮温度下具有高增益的SiGe/SiHBT,并分析了其工作机理.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 May 1997

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