Chin. J. Semicond. > Volume 18 > Issue 5 > Article Number: 371

Pb(Zr,Ti)O_3铁电场效应晶体管的制备及性能研究

于军 , 周文利 , 赵建洪 , 谢基凡 and 黄歆

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Abstract: 采用PLD(PulsedLaserDeposition)工艺制备Au/Pb(Zr,Ti)O3/SiO2/Si异质结构.这种结构的铁电场效应晶体管(FFET)的电性能由I-V和C-V特性表征.Au/Pb(Zr,Ti)O3/SiO2/Si异质结构的C-V曲线表现为极化开关,对应500nmPZT,记忆窗口约3V.实验表明Au/PZT/SiO2/Si栅结构实现了铁电体场效应存储性能.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 May 1997

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