Chin. J. Semicond. > 1997, Volume 18 > Issue 1 > 32-35
|

CONTENTS

功率MOSFET反向特性的分析模拟

周宝霞 , 陈治明 and 王守觉

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2771 Times PDF downloads: 3268 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 January 1997

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1997  >  18(1): 32-35
      周宝霞, 陈治明, 王守觉. 功率MOSFET反向特性的分析模拟[J]. 半导体学报(英文版), 1997, 18(1): 32-35.
      Citation:
      周宝霞, 陈治明, 王守觉. 功率MOSFET反向特性的分析模拟[J]. 半导体学报(英文版), 1997, 18(1): 32-35.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return