Chin. J. Semicond. > Volume 18 > Issue 1 > Article Number: 32

功率MOSFET反向特性的分析模拟

周宝霞 , 陈治明 and 王守觉

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Abstract: 本文对功率MOSFET的反向特性进行了模拟,着重分析了N沟功率MOSFET体内集成二极管的独特的作用,并对P沟器件在特性模拟时由于PSPICE模型参数的限制而表现出来的误差进行了分析,提出了改善措施,并得到了与实际相符合的结论.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 January 1997

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