Chin. J. Semicond. > 1997, Volume 18 > Issue 1 > 36-41
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薄膜深亚微米SOI MOSFET的瞬态数值模拟

张兴 and 王阳元

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    Received: 19 August 2015 Revised: Online: Published: 01 January 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(1): 36-41
      张兴, 王阳元. 薄膜深亚微米SOI MOSFET的瞬态数值模拟[J]. 半导体学报(英文版), 1997, 18(1): 36-41.
      Citation:
      张兴, 王阳元. 薄膜深亚微米SOI MOSFET的瞬态数值模拟[J]. 半导体学报(英文版), 1997, 18(1): 36-41.
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      • Received Date: 2015-08-19

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