Chin. J. Semicond. > Volume 18 > Issue 1 > Article Number: 36

薄膜深亚微米SOI MOSFET的瞬态数值模拟

张兴 and 王阳元

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Abstract: 采用数值模型成功地实现了薄膜深亚微米SOIMOSFET的瞬态数值模拟.为了提高模拟软件的计算效率和收敛速度,采用交替方向格式对载流子连续方程进行数值求解,得到了较为理想的模拟结果.通过大量的模拟计算,较为详细地分析了薄膜深亚微米全耗尽SOIMOSFET的瞬态工作机理,为今后小尺寸CMOS/SOIVLSI电路的设计提供了理论基础.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 January 1997

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