Chin. J. Semicond. > Volume 3 > Issue 2 > Article Number: 155

砷化镓掺硫气相外延

吴赛娟 , 仇兰华 , 陆大成 , 于清 and 王瑞林

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Abstract: <正> 为了重复可靠地获得研制肖特基混频器的优质外延材料(n~1-3×10~(17)/cm~3;d~1μm),对 Ga-AsCl_3(S_2Cl_2)H_2系统中硫的掺杂规律作了研究,获得一些有用数据.从而较好地控制了外延层的电学性质及表面形貌.

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History

Manuscript received: 20 August 2015 Manuscript revised: Online: Published: 01 February 1982

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